Review on Wide Band Gap Semiconductor

Abstract

Wide Band Gap semiconductor materials have recently attracted the attention of the researchers for developing future energy saving society, by designing efficient switch, attenuator and power electronic devices. The large band difference of the wide band gap materials allows the designer to develop high frequency, high power, short wavelength application-based devices, which shows thermal stability in high temperature, too. Among different wide band gap materials SiC and GaN are commonly used materials for developing high quality, crack free surface of the device as their matching substrates are commonly available in the market. On the other hand, some other wide Band Gap materials like diamond, Graphene, AlN, BN, CuO, ZnO have also come in focus due to their promising functions, especially for power-device applications. In some literature review, it has been found that device characteristics obtained from these materials are quite comparable with the traditional Si based devices, and in some cases these new material shows better performance than Si. Though, some unknown defects and interface properties may be associated with these materials, which can be addressed after a thorough survey of their functions.