发布求助
文献互助 智能选刊 最新文献

Proceedings of the 30th European Solid-State Circuits Conference最新文献

筛选
英文 中文
Technology considerations for automotive [automotive electronics] 汽车的技术考虑[汽车电子]
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356610
H. Casier, P. Moens, Koen Appeltans
{"title":"Technology considerations for automotive [automotive electronics]","authors":"H. Casier, P. Moens, Koen Appeltans","doi":"10.1109/ESSCIR.2004.1356610","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356610","url":null,"abstract":"In this paper, the evolution of automotive electronics and the specific electronic requirements posed by the automotive environment are discussed. Safety is a very dominant factor in automotive applications and this has a large impact on the required robustness of the electronics. As an example, DMOS optimization and ESD robustness considerations have led to the N-epi based structure of the AMIS 13T automotive technology. On top of the robust technology, innovative design techniques are described which further improve the robustness of the high voltage smart power applications for the harsh environment of the automotive electronics.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"65 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133877048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Design of low noise CMOS OEIC for blu-ray disc optical storage systems 用于蓝光光盘光存储系统的低噪声CMOS OEIC设计
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356670
Marco Giardina, A. Stek, G. D. Jong, J. Bergervoet
{"title":"Design of low noise CMOS OEIC for blu-ray disc optical storage systems","authors":"Marco Giardina, A. Stek, G. D. Jong, J. Bergervoet","doi":"10.1109/ESSCIR.2004.1356670","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356670","url":null,"abstract":"This paper discusses the design of an optoelectronic integrated circuit (OEIC intended for optical recording systems. The electronic noise in the system is an issue for high-speed operation and dual-layer blu-ray discs. In order to get a good impression of the various noise sources in the system, a noise calculation model has been developed. The design of the photo-diode and the preamplifiers in a BiCMOS/CMOS processes is discussed. The advantage of CMOS downscaling on the speed race is reported. A novel low-noise, low-voltage and low-power CMOS topology is described. Furthermore, some preliminary results of a test OEIC in 0.18 /spl mu/m CMOS are also reported. The measured input-referred current noise is 350 fAHz/sup -1/2/ at 20 MHz equivalent with the shot-noise level generated by a photo current of 380 nA. The active area of the test die, excluding bonding pads, is 0.36/spl times/0.26 mm/sup 2/ and the power consumption is 12.5 mW from a 1.5 V supply voltage at room temperature.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122105412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks] 1.25Gb/s以太网PON应用的突发模式发射机[无源光网络]
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356673
Y. Oh, Quan Le, Sang-Gug Lee, N.D.B. Yen, Ho-Yong Kang, T. Yoo
{"title":"Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks]","authors":"Y. Oh, Quan Le, Sang-Gug Lee, N.D.B. Yen, Ho-Yong Kang, T. Yoo","doi":"10.1109/ESSCIR.2004.1356673","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356673","url":null,"abstract":"This paper presents a burst-mode 1.25 Gb/s transmitter, suitable for use in Ethernet PON (E-PON) applications. With a burst enable signal, the transmitter proposed in this paper allows fast responses from the beginning of high-speed burst data while a conventional automatic power control circuit, based on feedback from a monitor photodiode, was used. The chip was implemented in 0.18 /spl mu/m CMOS technology and occupies an area of 0.9/spl times/0.75 mm/sup 2/ with about 260 mW power dissipation under 3.3 V supply. Measurements show a stable transmitted optical power over a wide temperature range (-40/spl deg/C to 80/spl deg/C) with above 10 dB extinction ratio.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124991641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A 5.2-GHz silicon bipolar power amplifier for IEEE 802.11a and HIPERLAN2 wireless LANs 用于IEEE 802.11a和HIPERLAN2无线局域网的5.2 ghz硅双极功率放大器
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356653
A. Scuderi, F. Carrara, Guiseppe Palmisano
{"title":"A 5.2-GHz silicon bipolar power amplifier for IEEE 802.11a and HIPERLAN2 wireless LANs","authors":"A. Scuderi, F. Carrara, Guiseppe Palmisano","doi":"10.1109/ESSCIR.2004.1356653","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356653","url":null,"abstract":"A monolithic 5.2-GHz linear power amplifier for IEEE802.11a and HIPERLAN2 wireless local area networks was integrated using a low-cost 46-GHz-f/sub T/ silicon bipolar process. At a 3-V supply voltage, the circuit exhibits a 25-dBm saturated output power, 26% maximum power-added efficiency, and 23.5-dBm output 1-dB compression point. The small-signal gain is 24 dB. Thanks to a linearizing bias network, the power amplifier is able to comply with the stringent error vector magnitude requirements of the standard up to a 19-dBm output power level. The device also features a power control function with a high dynamic range of 40 dB.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125571124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Power-efficient super class AB OTAs 高效节能的超级AB ota
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356660
Antonio Lopez-Martin, S. Baswa, Jaime Ramírez-Angulo, R. Carvajal
{"title":"Power-efficient super class AB OTAs","authors":"Antonio Lopez-Martin, S. Baswa, Jaime Ramírez-Angulo, R. Carvajal","doi":"10.1109/ESSCIR.2004.1356660","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356660","url":null,"abstract":"A family of low-voltage power-efficient class AB CMOS operational transconductance amplifiers (OTAs) is described. It is based on the combination of adaptive biasing techniques and resistive local common-mode feedback (LCMFB), which provides increased dynamic current boosting and gain-bandwidth product (GBW). The different classes of AB OTA topologies presented result from the combination of various adaptive biasing schemes and LCMFB. A 0.5-/spl mu/m CMOS implementation of three different OTAs shows enhancement factors of slew-rate and GBW up to 280 and 3.6, respectively, for an 80-pF load, compared to a conventional class A OTA with the same quiescent currents and supply voltage. The overhead in area, noise, and static power consumption, is minimal.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125945626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Two high-speed optical front-ends with integrated photodiodes in standard 0.18 /spl mu/m CMOS 两个高速光学前端，集成光电二极管，标准0.18 /spl μ m CMOS
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356671
C. Hermans, P. Leroux, M. Steyaert
{"title":"Two high-speed optical front-ends with integrated photodiodes in standard 0.18 /spl mu/m CMOS","authors":"C. Hermans, P. Leroux, M. Steyaert","doi":"10.1109/ESSCIR.2004.1356671","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356671","url":null,"abstract":"Two optical front-ends implemented in a standard 0.18 /spl mu/m CMOS technology are presented. They differ mainly in layout topology of the photodiode. The front-end with classical n-well diode achieves a bitrate of 300 Mbit/s. At an input power of -8 dBm, the BER is 2/spl times/10/sup -10/. The front-end with differential n-well diode outperforms the classical n-well topology and reaches bitrates up to 500 Mbit/s. At this speed, an input power of -8 dBm is sufficient to have a BER of 3/spl times/10/sup -10/. Both front-ends consume only 17 mW.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121146332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A wideband CMOS VCO for zero-IF GSM-CDMA single-chip transceiver 用于零中频GSM-CDMA单片机收发器的宽带CMOS压控振荡器
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356637
Kostas Manetakis, D. Jessie, C. Narathong
{"title":"A wideband CMOS VCO for zero-IF GSM-CDMA single-chip transceiver","authors":"Kostas Manetakis, D. Jessie, C. Narathong","doi":"10.1109/ESSCIR.2004.1356637","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356637","url":null,"abstract":"This paper presents a low-power CMOS VCO in a 0.35 /spl mu/m process which achieves a tuning range of 2.47 GHz-3.47 GHz and phase noise performance of -145dBc/Hz at 3 MHz offset (from a 1.8 GHz carrier). 5-bit digital coarse-tuning and accumulation-type MOS varactors allow for a 33% tuning range, which is required to cover the LO frequency range of a zero-IF GSM-CDMA transceiver and to account for process and temperature variations. Optimum design techniques ensure low VCO gain (<104 MHz/V) for good interoperability with the frequency synthesizer. An integrated regulator provides low supply pushing (40 kHz/V) and reduces the AM-to-PM sensitivity from the supply.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123931319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On-chip versus off-chip passives in multi-band radio design 多波段无线电设计中的片内无源与片外无源
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356684
X. Duo, Tommi Torikka, Lirong Zheng, M. Ismail, H. Tenhunen
{"title":"On-chip versus off-chip passives in multi-band radio design","authors":"X. Duo, Tommi Torikka, Lirong Zheng, M. Ismail, H. Tenhunen","doi":"10.1109/ESSCIR.2004.1356684","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356684","url":null,"abstract":"This paper presents on-chip versus off-chip passives in multi-band radio design. The analysis is demonstrated through several multi-band low noise amplifiers designs in SiGe BiCMOS and GaAs PHEMT. Cost-performance trade-off analysis shows that when on-chip passives are moved off chip, performance of RF circuits is always improved. However, simple RF circuits do not show obvious cost-benefits, whereas complex RF circuits such as multi-band radio can have significant cost savings by using off-chip passives.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115347841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
LC-oscillators above 100 GHz in silicon-based technology 硅基技术中100 GHz以上的lc振荡器
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356635
W. Winkler, J. Borngräber, B. Heinemann
{"title":"LC-oscillators above 100 GHz in silicon-based technology","authors":"W. Winkler, J. Borngräber, B. Heinemann","doi":"10.1109/ESSCIR.2004.1356635","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356635","url":null,"abstract":"In this paper, voltage-controlled LC-oscillators (VCO) are presented, reaching oscillation frequencies well above 100 GHz. The oscillators were fabricated in a 200 GHz SiGe:C BiCMOS technology with 0.25 /spl mu/m minimum feature size. In the design of the VCOs, two approaches for the frequency tuning of the oscillators were investigated. In the first design, the current flowing through the oscillator core was varied to get control of the output frequency. In the second design, a MOS-type varicap was used to tune the frequency of the LC-oscillator. The fabricated oscillators have a tuning range from 105.8 GHz to 114.5 GHz and from 113.2 GHz to 117.2 GHz, respectively.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124060187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
60 GHz transceiver circuits in SiGe:C BiCMOS technology 60 GHz收发电路采用SiGe:C BiCMOS技术
Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI: 10.1109/ESSCIR.2004.1356623
W. Winkler, J. Borngräber, H. Gustat, F. Korndörfer
{"title":"60 GHz transceiver circuits in SiGe:C BiCMOS technology","authors":"W. Winkler, J. Borngräber, H. Gustat, F. Korndörfer","doi":"10.1109/ESSCIR.2004.1356623","DOIUrl":"https://doi.org/10.1109/ESSCIR.2004.1356623","url":null,"abstract":"This paper presents the design and measurement of key circuit building blocks for a high-data-rate transceiver in the 60 GHz band. The adopted modulation scheme is ASK, for a simple configuration with high data rate. The circuits presented are: LNA, oscillator, mixer, modulator and demodulator. The circuits are fabricated in a 0.25 /spl mu/m SiGe:C BiCMOS technology.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121589339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信