60 GHz收发电路采用SiGe:C BiCMOS技术

Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI:10.1109/ESSCIR.2004.1356623

W. Winkler, J. Borngräber, H. Gustat, F. Korndörfer

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引用次数: 46

摘要

本文介绍了60ghz频段高数据速率收发器关键电路模块的设计与测量。采用ASK调制方式，配置简单，数据速率高。电路包括:LNA、振荡器、混频器、调制器和解调器。该电路采用0.25 /spl mu/m SiGe:C BiCMOS技术制造。

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60 GHz transceiver circuits in SiGe:C BiCMOS technology

This paper presents the design and measurement of key circuit building blocks for a high-data-rate transceiver in the 60 GHz band. The adopted modulation scheme is ASK, for a simple configuration with high data rate. The circuits presented are: LNA, oscillator, mixer, modulator and demodulator. The circuits are fabricated in a 0.25 /spl mu/m SiGe:C BiCMOS technology.

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Proceedings of the 30th European Solid-State Circuits Conference

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