LC-oscillators above 100 GHz in silicon-based technology

W. Winkler, J. Borngräber, B. Heinemann
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引用次数: 20

Abstract

In this paper, voltage-controlled LC-oscillators (VCO) are presented, reaching oscillation frequencies well above 100 GHz. The oscillators were fabricated in a 200 GHz SiGe:C BiCMOS technology with 0.25 /spl mu/m minimum feature size. In the design of the VCOs, two approaches for the frequency tuning of the oscillators were investigated. In the first design, the current flowing through the oscillator core was varied to get control of the output frequency. In the second design, a MOS-type varicap was used to tune the frequency of the LC-oscillator. The fabricated oscillators have a tuning range from 105.8 GHz to 114.5 GHz and from 113.2 GHz to 117.2 GHz, respectively.
硅基技术中100 GHz以上的lc振荡器
本文介绍了一种电压控制lc振荡器(VCO),其振荡频率可达100ghz以上。该振荡器采用200 GHz SiGe:C BiCMOS技术,最小特征尺寸为0.25 /spl mu/m。在压控振荡器的设计中,研究了两种调谐振荡器频率的方法。在第一个设计中,通过改变流过振荡器核心的电流来控制输出频率。在第二个设计中,使用mos型可变电容来调谐lc振荡器的频率。所制振荡器的调谐范围分别为105.8 GHz ~ 114.5 GHz和113.2 GHz ~ 117.2 GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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