Y. Oh, Quan Le, Sang-Gug Lee, N.D.B. Yen, Ho-Yong Kang, T. Yoo
{"title":"Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks]","authors":"Y. Oh, Quan Le, Sang-Gug Lee, N.D.B. Yen, Ho-Yong Kang, T. Yoo","doi":"10.1109/ESSCIR.2004.1356673","DOIUrl":null,"url":null,"abstract":"This paper presents a burst-mode 1.25 Gb/s transmitter, suitable for use in Ethernet PON (E-PON) applications. With a burst enable signal, the transmitter proposed in this paper allows fast responses from the beginning of high-speed burst data while a conventional automatic power control circuit, based on feedback from a monitor photodiode, was used. The chip was implemented in 0.18 /spl mu/m CMOS technology and occupies an area of 0.9/spl times/0.75 mm/sup 2/ with about 260 mW power dissipation under 3.3 V supply. Measurements show a stable transmitted optical power over a wide temperature range (-40/spl deg/C to 80/spl deg/C) with above 10 dB extinction ratio.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
This paper presents a burst-mode 1.25 Gb/s transmitter, suitable for use in Ethernet PON (E-PON) applications. With a burst enable signal, the transmitter proposed in this paper allows fast responses from the beginning of high-speed burst data while a conventional automatic power control circuit, based on feedback from a monitor photodiode, was used. The chip was implemented in 0.18 /spl mu/m CMOS technology and occupies an area of 0.9/spl times/0.75 mm/sup 2/ with about 260 mW power dissipation under 3.3 V supply. Measurements show a stable transmitted optical power over a wide temperature range (-40/spl deg/C to 80/spl deg/C) with above 10 dB extinction ratio.