两个高速光学前端,集成光电二极管,标准0.18 /spl μ m CMOS

C. Hermans, P. Leroux, M. Steyaert
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引用次数: 7

摘要

提出了两个采用标准0.18 /spl μ m CMOS技术实现的光学前端。它们的区别主要在于光电二极管的布局拓扑结构。前端采用经典的n阱二极管,比特率可达300 Mbit/s。在输入功率为- 8dbm时,误码率为2/ sp1乘以/10/sup -10/。前端采用差分n阱二极管,优于经典n阱拓扑,比特率高达500mbit /s。在这个速度下,-8 dBm的输入功率足以使误码率达到3/ sp1倍/10/sup -10/。两个前端仅消耗17兆瓦。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two high-speed optical front-ends with integrated photodiodes in standard 0.18 /spl mu/m CMOS
Two optical front-ends implemented in a standard 0.18 /spl mu/m CMOS technology are presented. They differ mainly in layout topology of the photodiode. The front-end with classical n-well diode achieves a bitrate of 300 Mbit/s. At an input power of -8 dBm, the BER is 2/spl times/10/sup -10/. The front-end with differential n-well diode outperforms the classical n-well topology and reaches bitrates up to 500 Mbit/s. At this speed, an input power of -8 dBm is sufficient to have a BER of 3/spl times/10/sup -10/. Both front-ends consume only 17 mW.
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