发布求助
文献互助 智能选刊 最新文献

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)最新文献

筛选
英文 中文
A 5.8 GHz transmitter MMIC for electronic toll collection system 用于电子收费系统的5.8 GHz发射机MMIC
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722661
Zhongmin Wen, T. Katayanagi, Y. Arai, H. Fujishiro, S. Seki
{"title":"A 5.8 GHz transmitter MMIC for electronic toll collection system","authors":"Zhongmin Wen, T. Katayanagi, Y. Arai, H. Fujishiro, S. Seki","doi":"10.1109/GAAS.1998.722661","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722661","url":null,"abstract":"The results on the design and the measurement of a 5.8 GHz GaAs transmitter MMIC for electronic toll collection (ETC) system on-board equipment are presented. The MMIC of single chip and single supply without any external element is assembled into a 16-pin SSOP package. A novel drain-controlling modulation circuit is invented as a modulator to provide linear modulation. The measured adjacent channel power (ACP) is lower than -47 dBc. The on/off ratio of modulation is above 40 dB at 5.8 GHz under a random data modulation of 1.024 Mbps with Manchester coding.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125891061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The effect of MESFET structures on frequency dispersion of drain conductance and its impact on mark density effect of high speed logic ICs MESFET结构对漏极电导频散的影响及其对高速逻辑集成电路标记密度效应的影响
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722640
S. Nakajima, M. Yanagisawa, T. Sakurada
{"title":"The effect of MESFET structures on frequency dispersion of drain conductance and its impact on mark density effect of high speed logic ICs","authors":"S. Nakajima, M. Yanagisawa, T. Sakurada","doi":"10.1109/GAAS.1998.722640","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722640","url":null,"abstract":"This paper describes the effect of MESFET structures on frequency dispersion of drain conductance (g/sub d/). The frequency dispersion of g/sub d/ is found to be affected by gate length, buried p-layer concentration, n/sup +/ sheet resistance, and active layer thickness. Finally, we show that the device with small frequency dispersion of g/sub d/ can suppress the mark density effect of logic ICs.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127111041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HBT small-signal model extraction using a genetic algorithm 基于遗传算法的HBT小信号模型提取
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722655
R. Menozzi, M. Borgarino, J. Tasselli, A. Marty
{"title":"HBT small-signal model extraction using a genetic algorithm","authors":"R. Menozzi, M. Borgarino, J. Tasselli, A. Marty","doi":"10.1109/GAAS.1998.722655","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722655","url":null,"abstract":"This work shows that physically meaningful wideband, multi-bias small-signal modeling of HBTs can be efficiently and accurately achieved using a genetic algorithm (GA). The physical significance of the equivalent circuit parameters extracted by the GA is checked using a direct extraction technique (DET). For each point we obtained a good agreement between the parameters extracted by the DET and by the GA, which demonstrates the ability of the GA to efficiently extract a physically significant small-signal model.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129118711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability 从AlGaAs迁移到InGaP发射极HBT IC工艺，以提高可靠性
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722654
T. Low, C. Hutchinson, P. Canfield, T. Shirley, R. Yeats, J.S.C. Chang, G. Essilfie, M. Culver, W.C. Whiteley, D. D'Avanzo, N. Pan, J. Elliot, C. Lutz
{"title":"Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability","authors":"T. Low, C. Hutchinson, P. Canfield, T. Shirley, R. Yeats, J.S.C. Chang, G. Essilfie, M. Culver, W.C. Whiteley, D. D'Avanzo, N. Pan, J. Elliot, C. Lutz","doi":"10.1109/GAAS.1998.722654","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722654","url":null,"abstract":"A reliable high performance InGaP emitter HBT process has been developed for RF and microwave instruments. The InGaP process achieves Ft and Fmax values of 65 GHz and 75 GHz, respectively, with BVeeo=8.4 V and beta=132. The MTTF values of >5/spl times/10/sup 5/ hours at maximum operating conditions (Tj=150/spl deg/C, Jc=0.6 mA/um/sup 2/) are an order of magnitude larger than values measured on both internal and commercially available AlGaAs emitter HBT circuits. The dominant failure mode was beta drift, consistent with other published reports for other InGaP HBTs, but the Ea of 0.68 eV is much smaller than published values, which suggests that an additional high activation energy mechanism was introduced at the high temperatures used in the published reliability tests.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131058286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 54
A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology 在可制造的180 GHz AlInAs/InGaAs HBT IC技术上实现的低功耗52.9 GHz静态分频器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722642
M. Sokolich, D. Docter, Y. Brown, A. Kramer, J. Jensen, W. Stanchina, S. Thomas, C. Fields, D. A. Ahmari, M. Lui, R. Martinez, J. Duvall
{"title":"A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology","authors":"M. Sokolich, D. Docter, Y. Brown, A. Kramer, J. Jensen, W. Stanchina, S. Thomas, C. Fields, D. A. Ahmari, M. Lui, R. Martinez, J. Duvall","doi":"10.1109/GAAS.1998.722642","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722642","url":null,"abstract":"We have demonstrated a 52.9 GHz static 1/8 divider in an AlInAs/InGaAs HBT technology. To our knowledge this is the fastest static divider reported in any semiconductor technology. The divider was realized in a high yield optical lithography triple mesa HBT process. At maximum speed, power consumption was 40 mW/flip-flop. A second 1/8 divider, designed for lower power but using the same size transistors, consumed 8.6 mW/flip-flop at 35 GHz. Sensitivity was excellent with the high-speed version operating from DC to 48 GHz with less than 0 dBm input power. Uniformity and reproducibility were also demonstrated; all functional dividers operated above 45 GHz on-wafer and the extrapolated yield of dividers indicates that the process is capable of supporting 500-1000 transistor designs. Circuit performance was relatively insensitive to the details of the device epitaxial structure indicating a highly robust and manufacturable process.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126027229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
40-Gbit/s TDM transmission technologies based on high-speed ICs 基于高速ic的40gbit /s TDM传输技术
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/gaas.1998.722622
Y. Miyamoto, M. Yoneyama, T. Otsuji, K. Yonenaga, N. Shimizu
{"title":"40-Gbit/s TDM transmission technologies based on high-speed ICs","authors":"Y. Miyamoto, M. Yoneyama, T. Otsuji, K. Yonenaga, N. Shimizu","doi":"10.1109/gaas.1998.722622","DOIUrl":"https://doi.org/10.1109/gaas.1998.722622","url":null,"abstract":"This paper presents the recent progress of 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-/spl mu/m InP HEMT ICs and new optical devices operating at 40 Gbit/s and beyond. System experiments demonstrate that the 40-Gbit/s TDM system is very attractive for upgrading transmission capacity into the Tbit/s range.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116250435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 5.8 GHz, 3.0 V single-supply power MMIC for electronic toll collection system 用于电子收费系统的5.8 GHz, 3.0 V单电源MMIC
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722659
T. Kunihisa, S. Yamamoto, M. Nishijima, T. Yokoyama, M. Nishitsuji, K. Nishii, O. Ishikawa
{"title":"A 5.8 GHz, 3.0 V single-supply power MMIC for electronic toll collection system","authors":"T. Kunihisa, S. Yamamoto, M. Nishijima, T. Yokoyama, M. Nishitsuji, K. Nishii, O. Ishikawa","doi":"10.1109/GAAS.1998.722659","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722659","url":null,"abstract":"A power MMIC operating with a single-supply (3.0 V) has been developed for 5.8 GHz Japanese electronic toll collection system (ETC). The present MMIC was provided with two FETs, matching circuits (input, intermediate and output matching circuits), and two drain bias circuits. High dielectric constant material SrTiO/sub 3/ (STO) is used for by-pass and coupling capacitors. Very small die size of 0.77 mm/sup 2/ has been realized by using the STO capacitors. High 1 dB output power compression point (P/sub 1dB/) of 13 dBm, high gain of 21.4 dB and low dissipation current of 41.3 mA have been achieved under 3.0 V single-supply condition.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125964087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Roadmapping RFIC test 路图RFIC测试
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722607
E. Strid
{"title":"Roadmapping RFIC test","authors":"E. Strid","doi":"10.1109/GAAS.1998.722607","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722607","url":null,"abstract":"The Semiconductor Industry Association (SIA), The Institute for Interconnecting and Packaging Electronic Circuits (IPC), and the National Electronics Manufacturing Initiative (NEMI) have expanded US industry-wide consensus efforts to chart out the futures of everything from semiconductor lithography to factory automation technologies, including the first draft of a roadmap for RF components in the 1996 NEMI work. This paper reviews recent RF industry practice in the areas of RFIC on-wafer and package testing, and predicts future trends in RFIC production testing. The testing and packaging issues for GaAs IC's are substantially the same as for Si IC's operating in the same frequency range and function. So while it is unlikely that there will be any inherent differential packaging or test advantages of GaAs over Si, it is similarly imperative to stay on or ahead of the industry roadmap to be competitive with the latest packaging and test technologies.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123811878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 6.45 GHz active bandpass filter using HBT negative resistance elements 采用HBT负阻元件的6.45 GHz有源带通滤波器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722650
K. Kobayashi, L. Tran, D. Umemoto, A. Oki, D. Streit
{"title":"A 6.45 GHz active bandpass filter using HBT negative resistance elements","authors":"K. Kobayashi, L. Tran, D. Umemoto, A. Oki, D. Streit","doi":"10.1109/GAAS.1998.722650","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722650","url":null,"abstract":"This paper reports on a 4th order HBT active bandpass filter based on a conservative 2-/spl mu/m GaAs HBT technology which possesses f/sub T/'s and f/sub max/'s of 24 GHz and 50 GHz, respectively. The MMIC operates at a center frequency of 6.45 GHz with a +0.25 dB insertion gain and a 1100 MHz -3 dB bandwidth. A lower-out-of-band rejection of -45 to SO dB is also obtained. The measured NF and input IP3 are 15.1 dB and -7.9 dBm, respectively. The corresponding P/sub 1db/ is -5 dBm. The compact 4th order bandpass filter MMIC is only 1.6/spl times/1.2 mm/sup 2/ and consumes 208 mW of dc power. This work represents the first fully RF (NF, IP3, P/sub 1dB/) characterized HBT MMIC active filter results so far reported. We believe that the HBT active filter MMIC design demonstrates compact size and feasible RF performance suitable for monolithically integrated DDFS, ADC anti-alias, and harmonic filter applications.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127181119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Manufacturing large diameter GaAs substrates for epitaxial devices by VB method 用VB法制造外延器件用大直径砷化镓衬底
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722686
R. Nakai, Y. Hagi, S. Kawarabayashi, N. Toyoda, M. Kiyama, S. Sawada, N. Kuwata, S. Nakajima
{"title":"Manufacturing large diameter GaAs substrates for epitaxial devices by VB method","authors":"R. Nakai, Y. Hagi, S. Kawarabayashi, N. Toyoda, M. Kiyama, S. Sawada, N. Kuwata, S. Nakajima","doi":"10.1109/GAAS.1998.722686","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722686","url":null,"abstract":"The vertical boat (VB) method has advantages in the growth of substrates for epitaxial devices. Low residual strain and low dislocation four inch GaAs crystals are manufactured with good reproducibility. Low residual strain reduces slip line occurrence and low dislocation density enables growth of low defects in epitaxial layers. FETs fabricated on carbon doped high resistivity VB substrates show high breakdown voltage. Vth was stable at higher drain voltages. Six inch GaAs crystals are also grown by VB and show adequate characteristics.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116870287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信