采用HBT负阻元件的6.45 GHz有源带通滤波器

K. Kobayashi, L. Tran, D. Umemoto, A. Oki, D. Streit
{"title":"采用HBT负阻元件的6.45 GHz有源带通滤波器","authors":"K. Kobayashi, L. Tran, D. Umemoto, A. Oki, D. Streit","doi":"10.1109/GAAS.1998.722650","DOIUrl":null,"url":null,"abstract":"This paper reports on a 4th order HBT active bandpass filter based on a conservative 2-/spl mu/m GaAs HBT technology which possesses f/sub T/'s and f/sub max/'s of 24 GHz and 50 GHz, respectively. The MMIC operates at a center frequency of 6.45 GHz with a +0.25 dB insertion gain and a 1100 MHz -3 dB bandwidth. A lower-out-of-band rejection of -45 to SO dB is also obtained. The measured NF and input IP3 are 15.1 dB and -7.9 dBm, respectively. The corresponding P/sub 1db/ is -5 dBm. The compact 4th order bandpass filter MMIC is only 1.6/spl times/1.2 mm/sup 2/ and consumes 208 mW of dc power. This work represents the first fully RF (NF, IP3, P/sub 1dB/) characterized HBT MMIC active filter results so far reported. We believe that the HBT active filter MMIC design demonstrates compact size and feasible RF performance suitable for monolithically integrated DDFS, ADC anti-alias, and harmonic filter applications.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 6.45 GHz active bandpass filter using HBT negative resistance elements\",\"authors\":\"K. Kobayashi, L. Tran, D. Umemoto, A. Oki, D. Streit\",\"doi\":\"10.1109/GAAS.1998.722650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on a 4th order HBT active bandpass filter based on a conservative 2-/spl mu/m GaAs HBT technology which possesses f/sub T/'s and f/sub max/'s of 24 GHz and 50 GHz, respectively. The MMIC operates at a center frequency of 6.45 GHz with a +0.25 dB insertion gain and a 1100 MHz -3 dB bandwidth. A lower-out-of-band rejection of -45 to SO dB is also obtained. The measured NF and input IP3 are 15.1 dB and -7.9 dBm, respectively. The corresponding P/sub 1db/ is -5 dBm. The compact 4th order bandpass filter MMIC is only 1.6/spl times/1.2 mm/sup 2/ and consumes 208 mW of dc power. This work represents the first fully RF (NF, IP3, P/sub 1dB/) characterized HBT MMIC active filter results so far reported. We believe that the HBT active filter MMIC design demonstrates compact size and feasible RF performance suitable for monolithically integrated DDFS, ADC anti-alias, and harmonic filter applications.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了一种基于2-/spl mu/m GaAs HBT保守技术的四阶HBT有源带通滤波器,该滤波器的f/sub T/ s和f/sub max/ s分别为24 GHz和50 GHz。MMIC工作在6.45 GHz的中心频率,插入增益为+0.25 dB,带宽为1100 MHz -3 dB。还获得了-45到SO dB的较低带外抑制。实测的NF和输入IP3分别为15.1 dB和-7.9 dBm。对应的P/sub 1db/为- 5dbm。紧凑的四阶带通滤波器MMIC仅为1.6/spl倍/1.2 mm/sup 2/,消耗208 mW直流功率。这项工作代表了迄今为止报道的第一个完全RF (NF, IP3, P/sub 1dB/)表征的HBT MMIC有源滤波器结果。我们相信HBT有源滤波器MMIC设计具有紧凑的尺寸和可行的射频性能,适合单片集成DDFS, ADC抗混叠和谐波滤波器应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 6.45 GHz active bandpass filter using HBT negative resistance elements
This paper reports on a 4th order HBT active bandpass filter based on a conservative 2-/spl mu/m GaAs HBT technology which possesses f/sub T/'s and f/sub max/'s of 24 GHz and 50 GHz, respectively. The MMIC operates at a center frequency of 6.45 GHz with a +0.25 dB insertion gain and a 1100 MHz -3 dB bandwidth. A lower-out-of-band rejection of -45 to SO dB is also obtained. The measured NF and input IP3 are 15.1 dB and -7.9 dBm, respectively. The corresponding P/sub 1db/ is -5 dBm. The compact 4th order bandpass filter MMIC is only 1.6/spl times/1.2 mm/sup 2/ and consumes 208 mW of dc power. This work represents the first fully RF (NF, IP3, P/sub 1dB/) characterized HBT MMIC active filter results so far reported. We believe that the HBT active filter MMIC design demonstrates compact size and feasible RF performance suitable for monolithically integrated DDFS, ADC anti-alias, and harmonic filter applications.
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