MESFET结构对漏极电导频散的影响及其对高速逻辑集成电路标记密度效应的影响

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722640

S. Nakajima, M. Yanagisawa, T. Sakurada

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摘要

本文描述了MESFET结构对漏极电导频散(g/sub / d/)的影响。g/sub / d/的频散受栅极长度、埋p层浓度、n/sup +/片电阻和有源层厚度的影响。最后，我们证明了频率色散为g/sub / d/的器件可以抑制逻辑ic的标记密度效应。

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The effect of MESFET structures on frequency dispersion of drain conductance and its impact on mark density effect of high speed logic ICs

This paper describes the effect of MESFET structures on frequency dispersion of drain conductance (g/sub d/). The frequency dispersion of g/sub d/ is found to be affected by gate length, buried p-layer concentration, n/sup +/ sheet resistance, and active layer thickness. Finally, we show that the device with small frequency dispersion of g/sub d/ can suppress the mark density effect of logic ICs.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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