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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)最新文献

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Scalable large-signal model for large RF power MESFETs 大射频功率mesfet的可扩展大信号模型
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722635
M. Shirokov, S. Kriventsov, J. Bao, J.C.M. Hwang, J. R. Jones, J. De Moura
{"title":"Scalable large-signal model for large RF power MESFETs","authors":"M. Shirokov, S. Kriventsov, J. Bao, J.C.M. Hwang, J. R. Jones, J. De Moura","doi":"10.1109/GAAS.1998.722635","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722635","url":null,"abstract":"Novel extraction and scaling procedures were developed for a commercially-available large-signal model which accurately predicted the performance of large RF power MESFETs with total gate widths on the order of cm. Most model parameters were found to be either independent of or linearly dependent on the total gate width. The only nonlinear scaling factors were attributed to higher thermal resistances of large MESFETs caused by nonuniform self heating. Modeled output waveforms and harmonic powers under class AB and B conditions were in excellent agreement with measured data.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129352747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monolithic 14 GHz wideband InP HBT BPSK modulator 单片14ghz宽带InP HBT BPSK调制器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722648
R. Desrosiers, J. Cowles, C. Hornbuckle, A. Gutierrez-Aitken, J. Becker
{"title":"Monolithic 14 GHz wideband InP HBT BPSK modulator","authors":"R. Desrosiers, J. Cowles, C. Hornbuckle, A. Gutierrez-Aitken, J. Becker","doi":"10.1109/GAAS.1998.722648","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722648","url":null,"abstract":"This paper presents the first reported monolithic InP HBT BPSK modulator capable of >3 Gsps data rates on a 14 GHz carrier. The MMIC, consisting of a digital modulation driver and a diode mixer, was fabricated using TRW's 75 GHz f/sub t/ InP HBT MMIC process. The use of InP based devices for the mixer and driver circuits results in a 2/spl times/ decrease in power consumption compared with equivalent GaAs HBT circuits. The successful integration of traditional microwave and digital circuits demonstrates the versatility of InP HBTs as a high frequency, low power mixed-mode technology.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130808500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Development of a GaAs-based monolithic surface acoustic wave integrated chemical microsensor 基于砷化镓的单片表面声波集成化学微传感器的研制
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-10-28 DOI: 10.1109/GAAS.1998.722681
A. Baca, E. Heller, V. Hietala, S.C. Casalnuovo, G. C. Frye, J. Klem, T. Drummond
{"title":"Development of a GaAs-based monolithic surface acoustic wave integrated chemical microsensor","authors":"A. Baca, E. Heller, V. Hietala, S.C. Casalnuovo, G. C. Frye, J. Klem, T. Drummond","doi":"10.1109/GAAS.1998.722681","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722681","url":null,"abstract":"An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130956265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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