基于砷化镓的单片表面声波集成化学微传感器的研制

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-10-28 DOI:10.1109/GAAS.1998.722681

A. Baca, E. Heller, V. Hietala, S.C. Casalnuovo, G. C. Frye, J. Klem, T. Drummond

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引用次数: 2

摘要

一种利用表面声波延迟线与GaAs MESFET电子器件集成的振荡器技术已被开发用于基于GaAs的集成微传感器应用。已经设计和制造了频率为470、350和200 MHz的振荡器。这些振荡器在其他射频应用中也很有前景。

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Development of a GaAs-based monolithic surface acoustic wave integrated chemical microsensor

An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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