单片14ghz宽带InP HBT BPSK调制器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722648

R. Desrosiers, J. Cowles, C. Hornbuckle, A. Gutierrez-Aitken, J. Becker

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引用次数: 3

摘要

本文介绍了第一个报道的单片InP HBT BPSK调制器，该调制器在14ghz载波上具有> 3gsps的数据速率。MMIC由数字调制驱动器和二极管混频器组成，采用TRW的75 GHz f/sub / InP HBT MMIC工艺制造。在混频器和驱动电路中使用基于InP的器件，与等效GaAs HBT电路相比，功耗降低了2/ 1倍。传统微波和数字电路的成功集成证明了InP hbt作为高频、低功耗混合模式技术的多功能性。

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Monolithic 14 GHz wideband InP HBT BPSK modulator

This paper presents the first reported monolithic InP HBT BPSK modulator capable of >3 Gsps data rates on a 14 GHz carrier. The MMIC, consisting of a digital modulation driver and a diode mixer, was fabricated using TRW's 75 GHz f/sub t/ InP HBT MMIC process. The use of InP based devices for the mixer and driver circuits results in a 2/spl times/ decrease in power consumption compared with equivalent GaAs HBT circuits. The successful integration of traditional microwave and digital circuits demonstrates the versatility of InP HBTs as a high frequency, low power mixed-mode technology.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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