基于高速ic的40gbit /s TDM传输技术

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/gaas.1998.722622

Y. Miyamoto, M. Yoneyama, T. Otsuji, K. Yonenaga, N. Shimizu

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引用次数: 7

摘要

本文介绍了基于0.1-/spl μ m InP HEMT集成电路的40 Gbit/s时分复用(TDM)传输技术的最新进展，以及工作在40 Gbit/s及以上的新型光器件。系统实验表明，40 gbit /s时分复用系统对于将传输容量提升到Tbit/s范围具有很大的吸引力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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40-Gbit/s TDM transmission technologies based on high-speed ICs

This paper presents the recent progress of 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-/spl mu/m InP HEMT ICs and new optical devices operating at 40 Gbit/s and beyond. System experiments demonstrate that the 40-Gbit/s TDM system is very attractive for upgrading transmission capacity into the Tbit/s range.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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