用VB法制造外延器件用大直径砷化镓衬底

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722686

R. Nakai, Y. Hagi, S. Kawarabayashi, N. Toyoda, M. Kiyama, S. Sawada, N. Kuwata, S. Nakajima

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引用次数: 1

摘要

垂直船(VB)法在外延器件衬底生长方面具有优势。制备了低残余应变和低位错的四英寸砷化镓晶体，具有良好的再现性。低的残余应变减少了滑移线的发生，低的位错密度使外延层中的低缺陷生长。在掺杂碳的高电阻率VB衬底上制备的fet具有高击穿电压。Vth在较高的漏极电压下稳定。用VB也生长出了6英寸的砷化镓晶体，并显示出足够的特性。

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Manufacturing large diameter GaAs substrates for epitaxial devices by VB method

The vertical boat (VB) method has advantages in the growth of substrates for epitaxial devices. Low residual strain and low dislocation four inch GaAs crystals are manufactured with good reproducibility. Low residual strain reduces slip line occurrence and low dislocation density enables growth of low defects in epitaxial layers. FETs fabricated on carbon doped high resistivity VB substrates show high breakdown voltage. Vth was stable at higher drain voltages. Six inch GaAs crystals are also grown by VB and show adequate characteristics.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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