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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)最新文献

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The importance of gate charge formulation in large-signal PHEMT modeling 栅极电荷公式在大信号PHEMT建模中的重要性
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722634
R. Mallavarpu, D. Teeter, M. Snow
{"title":"The importance of gate charge formulation in large-signal PHEMT modeling","authors":"R. Mallavarpu, D. Teeter, M. Snow","doi":"10.1109/GAAS.1998.722634","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722634","url":null,"abstract":"A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117018370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High performance InP-based phototransistors for long wavelength, HBT-based optical receivers 用于长波长、基于hpt的光接收器的高性能inp光电晶体管
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722658
S. M. Frimel, K. Roenker, W. Stanchina, H. Sun
{"title":"High performance InP-based phototransistors for long wavelength, HBT-based optical receivers","authors":"S. M. Frimel, K. Roenker, W. Stanchina, H. Sun","doi":"10.1109/GAAS.1998.722658","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722658","url":null,"abstract":"The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device's high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126577954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
X-band heterostructure interband tunneling FET (HITFET) VCOs x波段异质结构带间隧道效应场效应管(HITFET) vco
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722667
V. Nair, N. El-Zein, J. Lewis, M. Deshpande, G. Kramer, M. Kyler, G. Maracas, H. Goronkin
{"title":"X-band heterostructure interband tunneling FET (HITFET) VCOs","authors":"V. Nair, N. El-Zein, J. Lewis, M. Deshpande, G. Kramer, M. Kyler, G. Maracas, H. Goronkin","doi":"10.1109/GAAS.1998.722667","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722667","url":null,"abstract":"This paper reports on the DC and microwave performance of novel X-band voltage controlled oscillators fabricated by integrating heterostructure interband tunneling diode (HITD) with a heterostructure FET. The measured RF performance of VCOs incorporating single and double HITDs is discussed. The power output of the single HITD VCO was 2.0 dBm and that of the dual HITD was 4.3 dBm at a center frequency of 8.2 GHz. The dual HITD VCO also exhibited a wider tuning range than the single HITD VCO. The phase noise of these VCOs was approximately -128 dBc, 3 MHz away from the center frequency.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114801697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Multi-octave transformer coupled differential amplifier for high dynamic range 用于高动态范围的多倍频变换器耦合差分放大器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722677
D. Meharry
{"title":"Multi-octave transformer coupled differential amplifier for high dynamic range","authors":"D. Meharry","doi":"10.1109/GAAS.1998.722677","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722677","url":null,"abstract":"A novel PHEMT MMIC broadband amplifier circuit has been developed which has extremely high dynamic range, as characterized by its second order distortion products. Amplifier small signal bandwidth is 4 to 16 GHz. Measured OIP2 of this circuit exceeds 60 dBm with a 1 dB compression point of approximately 5 dBm. This circuit outperforms a conventional amplifier, fabricated on the same wafer, by more than 30 dB. Because it utilizes a combination of two circuit techniques, the approach can be applied to different device technologies, for optimization of noise figure or other performance parameters.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129321515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
LSI capability demonstration of an 0.15 /spl mu/m-0.3 /spl mu/m GaAs HEMT and PM-HEMT 3 level metallization E/D-technology for mixed signal circuits 用于混合信号电路的0.15 /spl mu/m-0.3 /spl mu/m GaAs HEMT和PM-HEMT 3级金属化E/ d技术的LSI能力演示
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722626
A. Thiede, Z. Lao, H. Lienhart, M. Sedler, J. Seibel, J. Hornung, J. Schneider, G. Kaufel, W. Bronner, K. Kohler, T. Jakobus, M. Schlechtweg
{"title":"LSI capability demonstration of an 0.15 /spl mu/m-0.3 /spl mu/m GaAs HEMT and PM-HEMT 3 level metallization E/D-technology for mixed signal circuits","authors":"A. Thiede, Z. Lao, H. Lienhart, M. Sedler, J. Seibel, J. Hornung, J. Schneider, G. Kaufel, W. Bronner, K. Kohler, T. Jakobus, M. Schlechtweg","doi":"10.1109/GAAS.1998.722626","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722626","url":null,"abstract":"A 16/spl times/16 bit parallel multiplier based on a 26 k sea-of-gates has been fabricated successfully to demonstrate the LSI capability of our mixed signal IC technology including pseudomorphic T-gate HEMTs for high speed as well as three levels of gold metallization for high integration complexity. To prove the high speed performance, a digital dynamic frequency divider operating in a frequency band from about 36 GHz up to almost 60 GHz has been realised.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126171238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets 一种用于GSM/DCS手机的高效单链GaAs MESFET MMIC双频功率放大器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722629
A. Adar, J. DeMoura, H. Balshem, J. Lott
{"title":"A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets","authors":"A. Adar, J. DeMoura, H. Balshem, J. Lott","doi":"10.1109/GAAS.1998.722629","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722629","url":null,"abstract":"In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification, switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 /spl mu/m GaAs MESFET process and is assembled in a low cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 volts in GSM and DCS bands, is 48% PAE at Pout=+35 dBm and 44% PAE at Pout =+32.5 dBm respectively.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123950454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Low cost, plastic encapsulated mixers for C/X-band applications 低成本，塑料封装混频器的C/ x波段应用
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722647
C. Trantanella, M. Shifrin, B. Bedard
{"title":"Low cost, plastic encapsulated mixers for C/X-band applications","authors":"C. Trantanella, M. Shifrin, B. Bedard","doi":"10.1109/GAAS.1998.722647","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722647","url":null,"abstract":"Two new plastic encapsulated passive mixers operating in the C- and X-bands are presented in this paper. One mixer is a narrowband design, covering the 4.5 to 6 GHz range, while the other mixer is broadband, covering 4.5 to 9 GHz. The narrowband/broadband mixers feature a conversion loss of 6/8 dB, an LO to RF isolation of 30/20 dB, and an IF frequency response out to 1.6/2.5 GHz. These designs are the first reported realizations of plastic encapsulated, passive mixers operating in the C/X-bands.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123371687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High-voltage HBT technology 高压HBT技术
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722652
D. Hill
{"title":"High-voltage HBT technology","authors":"D. Hill","doi":"10.1109/GAAS.1998.722652","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722652","url":null,"abstract":"This paper describes the status of HBT technology for applications at 12 V and above. Design and process considerations for fabrication of HBTs with high breakdown voltage are discussed, along with a general approach for reduced thermal resistance. Current understanding of high-voltage HBT reliability and market outlook are reviewed.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130982941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High IP3-low DC power 44 GHz InP-HBT amplifier 高ip3低直流功率44 GHz InP-HBT放大器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722613
K. Kobayashi, J. Cowles, L. Tran, A. Gutierrez-Aitken, M. Nishimoto, J. Elliott, A. Oki, D.C. Strelt
{"title":"High IP3-low DC power 44 GHz InP-HBT amplifier","authors":"K. Kobayashi, J. Cowles, L. Tran, A. Gutierrez-Aitken, M. Nishimoto, J. Elliott, A. Oki, D.C. Strelt","doi":"10.1109/GAAS.1998.722613","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722613","url":null,"abstract":"This paper reports on what is believed to be the highest IP3/P/sub DC/ power linearity figure of merit (LFOM) achieved from a MMIC amplifier at millimeter-wave frequencies. The 44 GHz amplifier is based on an InP HBT technology with f/sub T/s and f/sub max/s of 70 GHz and 200 GHz respectively. The single stage design consists of four pre-matched 1/spl times/10 /spl mu/m/sup 2/ four-finger HBT cells combined in parallel which consumes 48 mA of current through a 2.5 V supply. At this bias, the amplifier obtains a gain of 5.5-6 dB over a 44-50 GHz frequency band and achieves a peak gain of 6.8-7.6 dB under a bias current of 80 mA. At the low bias current of 48 mA and a total DC power of 120 mW, the amplifier obtains a peak IP3 of 34 dBm at 42 GHz which corresponds to a record IP3/P/sub DC/ power ratio of 21:1, a factor of 2 better than the state-of-the-art MMCs reported in this frequency range. The IP3 characteristics of the 44 GHz amplifier also indicate that the maximum IP3 and optimum 1P3/P/sub DC/ LFOM both occur at lower V/sub ce/'s for low current density operation, enabling the high LFOM. These characteristics make InP HBTs attractive for low power MM-wave receiver applications.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124102879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
3 watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15 /spl mu/m power PHEMT process 3瓦ka波段MMIC HPA和驱动放大器在全选择性0.15 /spl mu/m功率PHEMT工艺中实现
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI: 10.1109/GAAS.1998.722619
J. Komiak, W. Kong, P. Chao, K. Nichols
{"title":"3 watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15 /spl mu/m power PHEMT process","authors":"J. Komiak, W. Kong, P. Chao, K. Nichols","doi":"10.1109/GAAS.1998.722619","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722619","url":null,"abstract":"The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116786210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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