高压HBT技术

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722652

D. Hill

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引用次数: 3

摘要

本文介绍了应用于12v及以上电压的HBT技术的现状。讨论了高击穿电压HBTs制造的设计和工艺考虑因素，以及降低热阻的一般方法。综述了目前对高压高压bt可靠性的认识和市场前景。

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High-voltage HBT technology

This paper describes the status of HBT technology for applications at 12 V and above. Design and process considerations for fabrication of HBTs with high breakdown voltage are discussed, along with a general approach for reduced thermal resistance. Current understanding of high-voltage HBT reliability and market outlook are reviewed.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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