{"title":"3 watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15 /spl mu/m power PHEMT process","authors":"J. Komiak, W. Kong, P. Chao, K. Nichols","doi":"10.1109/GAAS.1998.722619","DOIUrl":null,"url":null,"abstract":"The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.