3瓦ka波段MMIC HPA和驱动放大器在全选择性0.15 /spl mu/m功率PHEMT工艺中实现

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722619

J. Komiak, W. Kong, P. Chao, K. Nichols

{"title":"3瓦ka波段MMIC HPA和驱动放大器在全选择性0.15 /spl mu/m功率PHEMT工艺中实现","authors":"J. Komiak, W. Kong, P. Chao, K. Nichols","doi":"10.1109/GAAS.1998.722619","DOIUrl":null,"url":null,"abstract":"The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"3 watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15 /spl mu/m power PHEMT process\",\"authors\":\"J. Komiak, W. Kong, P. Chao, K. Nichols\",\"doi\":\"10.1109/GAAS.1998.722619\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"196 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722619\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

本文报道了一种门长为0.15 um的全选择性凹槽PHEMT功率放大器的设计和性能，为ka波段功率建立了新的基准。该放大器在30% PAE时的平均功率为bbbb3瓦，在30 GHz时的功率增益为13db, 1 dB增益压缩输出功率为bbbb2.5瓦。P1dB输出功率是先前报道的ka波段MMIC功率放大器最佳结果的2.5倍。还描述了一个0.5瓦的P1dB驱动放大器。

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3 watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15 /spl mu/m power PHEMT process

The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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