{"title":"一种用于GSM/DCS手机的高效单链GaAs MESFET MMIC双频功率放大器","authors":"A. Adar, J. DeMoura, H. Balshem, J. Lott","doi":"10.1109/GAAS.1998.722629","DOIUrl":null,"url":null,"abstract":"In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification, switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 /spl mu/m GaAs MESFET process and is assembled in a low cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 volts in GSM and DCS bands, is 48% PAE at Pout=+35 dBm and 44% PAE at Pout =+32.5 dBm respectively.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets\",\"authors\":\"A. Adar, J. DeMoura, H. Balshem, J. Lott\",\"doi\":\"10.1109/GAAS.1998.722629\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification, switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 /spl mu/m GaAs MESFET process and is assembled in a low cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 volts in GSM and DCS bands, is 48% PAE at Pout=+35 dBm and 44% PAE at Pout =+32.5 dBm respectively.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722629\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722629","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets
In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification, switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 /spl mu/m GaAs MESFET process and is assembled in a low cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 volts in GSM and DCS bands, is 48% PAE at Pout=+35 dBm and 44% PAE at Pout =+32.5 dBm respectively.
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