用于长波长、基于hpt的光接收器的高性能inp光电晶体管

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722658

S. M. Frimel, K. Roenker, W. Stanchina, H. Sun

{"title":"用于长波长、基于hpt的光接收器的高性能inp光电晶体管","authors":"S. M. Frimel, K. Roenker, W. Stanchina, H. Sun","doi":"10.1109/GAAS.1998.722658","DOIUrl":null,"url":null,"abstract":"The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device's high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High performance InP-based phototransistors for long wavelength, HBT-based optical receivers\",\"authors\":\"S. M. Frimel, K. Roenker, W. Stanchina, H. Sun\",\"doi\":\"10.1109/GAAS.1998.722658\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device's high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722658\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文研究了InAlAs/InGaAs异质结双极光电晶体管(HBTs)的性能，以开发用于长波光接收机的改进的基于异质结双极晶体管(HBTs)的光电探测器。本文介绍了基极偏置和通过发射器进行正面光注入的器件的实验结果，证明了该器件的高光增益(30)和高频性能(f/sub r/=50 GHz)。结果表明，HBT是一种有吸引力的替代PIN光电探测器用于基于HBT的光接收器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High performance InP-based phototransistors for long wavelength, HBT-based optical receivers

The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device's high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

自引率

0.00%

发文量