{"title":"用于高动态范围的多倍频变换器耦合差分放大器","authors":"D. Meharry","doi":"10.1109/GAAS.1998.722677","DOIUrl":null,"url":null,"abstract":"A novel PHEMT MMIC broadband amplifier circuit has been developed which has extremely high dynamic range, as characterized by its second order distortion products. Amplifier small signal bandwidth is 4 to 16 GHz. Measured OIP2 of this circuit exceeds 60 dBm with a 1 dB compression point of approximately 5 dBm. This circuit outperforms a conventional amplifier, fabricated on the same wafer, by more than 30 dB. Because it utilizes a combination of two circuit techniques, the approach can be applied to different device technologies, for optimization of noise figure or other performance parameters.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Multi-octave transformer coupled differential amplifier for high dynamic range\",\"authors\":\"D. Meharry\",\"doi\":\"10.1109/GAAS.1998.722677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel PHEMT MMIC broadband amplifier circuit has been developed which has extremely high dynamic range, as characterized by its second order distortion products. Amplifier small signal bandwidth is 4 to 16 GHz. Measured OIP2 of this circuit exceeds 60 dBm with a 1 dB compression point of approximately 5 dBm. This circuit outperforms a conventional amplifier, fabricated on the same wafer, by more than 30 dB. Because it utilizes a combination of two circuit techniques, the approach can be applied to different device technologies, for optimization of noise figure or other performance parameters.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"89 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722677\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi-octave transformer coupled differential amplifier for high dynamic range
A novel PHEMT MMIC broadband amplifier circuit has been developed which has extremely high dynamic range, as characterized by its second order distortion products. Amplifier small signal bandwidth is 4 to 16 GHz. Measured OIP2 of this circuit exceeds 60 dBm with a 1 dB compression point of approximately 5 dBm. This circuit outperforms a conventional amplifier, fabricated on the same wafer, by more than 30 dB. Because it utilizes a combination of two circuit techniques, the approach can be applied to different device technologies, for optimization of noise figure or other performance parameters.
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