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2021 International Semiconductor Conference (CAS)最新文献

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Design of 1.8V LVDS Transmitter in GF 22nm For Associative Memory 用于联想存储器的GF 22nm 1.8V LVDS发射机设计
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604147
K. R. Teja, G. V. Mallikarjuna Reddy, Subhakumar Reddy A
{"title":"Design of 1.8V LVDS Transmitter in GF 22nm For Associative Memory","authors":"K. R. Teja, G. V. Mallikarjuna Reddy, Subhakumar Reddy A","doi":"10.1109/CAS52836.2021.9604147","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604147","url":null,"abstract":"This paper presents the design of Low Voltage Differential Signaling (LVDS) transmitter for Associative Memory (AM). AM is used in High Energy Physics (HEP) experiments like Large Hadron Collider (LHC). AM can store up to one billion patterns. The proposed design works for IO supply of 1.8V and core supply of 1V with an output voltage swing of 350mV over 1.2V offset voltage. This design is implemented in 22nm FDSOI technology to work across process corners and is simulated using cadence virtuoso tool. This design is met the required data rate of 1Gbps for AM application with power consumption of 12.34mW.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115389419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Novel ScAlN/Si SAW-type devices targeting surface acoustic wave/spin wave coupling 针对表面声波/自旋波耦合的新型ScAlN/Si saw型器件
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604142
A. Nicoloiu, C. Nastase, I. Zdru, D. Vasilache, G. Boldeiu, M. Ciornei, A. Dinescu, A. Müller
{"title":"Novel ScAlN/Si SAW-type devices targeting surface acoustic wave/spin wave coupling","authors":"A. Nicoloiu, C. Nastase, I. Zdru, D. Vasilache, G. Boldeiu, M. Ciornei, A. Dinescu, A. Müller","doi":"10.1109/CAS52836.2021.9604142","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604142","url":null,"abstract":"This paper reports high frequency surface acoustic wave (SAW) devices developed on Sc doped (30%) AlN on high resistivity Si for demonstrating surface acoustic wave – spin wave coupling. Enhanced Q-factors were found for both propagation modes – Rayleigh (4.7 GHz) and Sezawa (8 GHz). SAW/SW (spin wave) coupling is proven for two-ports SAW structures having a magnetostrictive layer of Ni between the two interdigitated transducers (IDTs). A decrease of 3.42 dB was observed in the amplitude of the transmission parameter, at resonance, when the magnetic field was applied. The angle between the applied magnetic field and the SAW propagation direction is π/4.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116396805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Current-mode quadrature ring oscillator for bioimpedance applications 用于生物阻抗应用的电流模式正交环振荡器
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604153
Z. Germán-Salló, R. Groza, R. Onet, M. Neag
{"title":"Current-mode quadrature ring oscillator for bioimpedance applications","authors":"Z. Germán-Salló, R. Groza, R. Onet, M. Neag","doi":"10.1109/CAS52836.2021.9604153","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604153","url":null,"abstract":"A tunable frequency current-mode quadrature ring oscillator for bioimpedance spectroscopy applications is presented. It consists of four cross-coupled differential delay cells implemented using log domain circuits. The oscillation frequency can be fine-tuned using the bias current of the delay cells and coarse tuned by modifying the capacitors of the delay cells. The ring oscillator output current can be used for bioimpedance measurements as a current stimulus via a current buffer. Two quadrature output currents are converted using current-input comparators to in-phase and quadrature square voltages needed for demodulation on the bioimpedance readout side. The ring oscillator was implemented in a standard 180nm CMOS technology using MOS transistors operating in weak inversion. The oscillation frequency can be modified from 7.27kHz to 15.13MHz, while consuming from 1.05mA to 1.23mA from a 2V supply voltage.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127443769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microtextured photovoltaic cells system for UAVs autonomy extension 用于无人机自主扩展的微纹理光伏电池系统
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604168
O. Ionescu, Ileana Viorica Cernica, E. Manea, M. Purica, Parvulescu Catalin Corneliu, C. Păun, Popescu Alina
{"title":"Microtextured photovoltaic cells system for UAVs autonomy extension","authors":"O. Ionescu, Ileana Viorica Cernica, E. Manea, M. Purica, Parvulescu Catalin Corneliu, C. Păun, Popescu Alina","doi":"10.1109/CAS52836.2021.9604168","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604168","url":null,"abstract":"The UAV market is encountering a significant development in the last decade. There are numerous applications in aerial surveillance, emergency situations, delivery of essential products in remote area which are now conducted via UAVs. In this article are presented the design and manufacturing of an area of microtextured photovoltaic cells with increased efficiency, having physical-mechanical capabilities according to the requirements of aerospace applications. Their realization and integration on an ultralight wing made of composite materials is also an exceptional technological achievement and at the same time, a great challenge, given the demands that arise between the two dissimilar materials","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127302541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Changing The Paradigm In Common Mode Transient Immunity (CMTI) Testing Of Dual Channel Galvanically Isolated Gate Drivers 改变双通道电隔离栅驱动器共模暂态抗扰度(CMTI)测试范式
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604169
F. Vlădoianu, M. Strelec, I. Hurez, V. Anghel, G. Brezeanu
{"title":"Changing The Paradigm In Common Mode Transient Immunity (CMTI) Testing Of Dual Channel Galvanically Isolated Gate Drivers","authors":"F. Vlădoianu, M. Strelec, I. Hurez, V. Anghel, G. Brezeanu","doi":"10.1109/CAS52836.2021.9604169","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604169","url":null,"abstract":"This paper presents a method to measure the CMTI performance of dual channel galvanically isolated gate drivers using transformers and filtering capacitors on the outputs. As a result, typical application CMTI conditions are replicated. The working principle was successfully verified using a 5 V and 50% duty cycle PWM pulse with 10 ns rise and fall times. Three commercially available dual channel galvanically isolated gate drivers were used to evaluate the proposed setup in comparison with the state-of-the-art approach. CMTI slopes of ±50 kV/μs, ±95 kV/μs, and ±125 kV/μs, together with a common mode pulse of ±1.5 kV were used in the assessment. The state-of-the-art method showed several CMTI failures, whereas the proposed setup passed all conditions.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130695793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Dual Low Voltage Chopper Offset-Stabilized Operational Amplifier 双低电压斩波偏置稳定运算放大器
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604191
C. Stănescu, C. Dinca, A. Veselu, R. Cojan, Andrei Sevcenco, Victor Bricicaru, Adrian Croitoru
{"title":"A Dual Low Voltage Chopper Offset-Stabilized Operational Amplifier","authors":"C. Stănescu, C. Dinca, A. Veselu, R. Cojan, Andrei Sevcenco, Victor Bricicaru, Adrian Croitoru","doi":"10.1109/CAS52836.2021.9604191","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604191","url":null,"abstract":"The paper presents a dual low voltage chopper offset-stabilized operational amplifier with symmetrical RC notch filters, having a 1.6-5.5 V supply range, and being fabricated in a 0.25 µm CMOS process. The chopping frequency is 100 kHz. A new constant-gm technique is implemented within the input stage of main amp, improving most electrical performances. The amplifier has a typical offset voltage of 1 µV, a minimum PSRR of 128 dB, a minimum CMRR of 120 dB, a noise PSD of 42 nV/√Hz, 1.5 MHz unity gain bandwidth, and THD + noise of 0.001 % at 1 kHz, while consuming 70 µA per channel.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122638174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Capacitor-less LDO with High PSR over a wide frequency range 在宽频率范围内具有高PSR的无电容LDO
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604164
Iulian Sularea, C. Răducan, M. Neag
{"title":"A Capacitor-less LDO with High PSR over a wide frequency range","authors":"Iulian Sularea, C. Răducan, M. Neag","doi":"10.1109/CAS52836.2021.9604164","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604164","url":null,"abstract":"This paper presents a capacitor-less low dropout (LDO) voltage PMOS regulator with high power supply rejection (PSR). The proposed LDO combines into a single core two differential stages: a primary one - as error amplifier for the negative feedback loop - and a secondary one, used to create a feedforward cancellation path from the supply to the gate of the pass transistor. With this arrangement the LDO can provide a PSR of -43dB at 1MHz for the maximum load current of 50mA. This performance is achieved with only 20µA quiescent current and a load capacitor of 100pF. The LDO is designed in a 0.18µm standard CMOS process.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"16 9-12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131529037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the Analysis of the Rectangular Dielectric Waveguide, by Using the Generalized Telegraphist’s Equations Based Method 基于广义电报方程的矩形介质波导分析方法
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604181
S. Simion
{"title":"On the Analysis of the Rectangular Dielectric Waveguide, by Using the Generalized Telegraphist’s Equations Based Method","authors":"S. Simion","doi":"10.1109/CAS52836.2021.9604181","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604181","url":null,"abstract":"The Generalized Telegraphist’s Equations (GTE) based method is used to analyze the rectangular dielectric waveguide. Compared to the HFSS results, it is shown that the numerical results obtained with the GTE based method are similar for the propagation constant values, but significant differences have been observed for the attenuation constant and equivalent characteristic impedance values. Also, significant differences have been observed for the transverse electric field distributions.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"2674 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133058704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Effect of Temperature on the Electrical Response Excited by Acoustically Driven Bandgap Modulation in an Indium Antimonide Transducer 温度对锑化铟换能器声驱动带隙调制激发电响应的影响
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604197
H. Najafabadi, M. A. Meier, G. Hallock
{"title":"The Effect of Temperature on the Electrical Response Excited by Acoustically Driven Bandgap Modulation in an Indium Antimonide Transducer","authors":"H. Najafabadi, M. A. Meier, G. Hallock","doi":"10.1109/CAS52836.2021.9604197","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604197","url":null,"abstract":"A semiconductor device, such as an InSb transducer, can be used for pressure gradient sensing. Temperature affects local dynamic diffusion current within an InSb transducer. Parameters such as mobility and diffusion coefficients depend on scattering, and the major scattering effects are also temperature dependent. In turn, electrical responses excited by acoustically driven band gap modulation are affected. The open-circuit voltage of an indium antimonide transducer subject to acoustic resonance is amplified 0.3 percent per Kelvin by an increase in temperature. Quantum effects on carrier transport and behavior also depend on temperature, so there are temperature limits in which quantum effects are minimal. At very low temperatures, the quantum effects and wave nature of carriers can play a significant role in carrier behavior and transport.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114417872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Parameters optimization for pin-Tunnel-FETs 引脚隧道场效应管的参数优化
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604204
R. Vasile, C. Ravariu, B. Appasani, A. Srinivasulu
{"title":"Parameters optimization for pin-Tunnel-FETs","authors":"R. Vasile, C. Ravariu, B. Appasani, A. Srinivasulu","doi":"10.1109/CAS52836.2021.9604204","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604204","url":null,"abstract":"The paper reports simulation studies of the Tunnel Field Effect Transistor (T-FET). After CMOS ultimate technological nodes limitation, co-integration with nano-devices is expected. A representative device is T-FET with lower sub-threshold slope than the ideal slope of any MOSFET - 60mV/dec. Some key constructive data to achieve a minimum sub-threshold slope are: doping concentration in median i-region, high-k dielectrics and dielectric thickness. A successful solution is a nano-wire T-FET with simulated slope of 39mV/dec.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130923039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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