改变双通道电隔离栅驱动器共模暂态抗扰度(CMTI)测试范式

F. Vlădoianu, M. Strelec, I. Hurez, V. Anghel, G. Brezeanu
{"title":"改变双通道电隔离栅驱动器共模暂态抗扰度(CMTI)测试范式","authors":"F. Vlădoianu, M. Strelec, I. Hurez, V. Anghel, G. Brezeanu","doi":"10.1109/CAS52836.2021.9604169","DOIUrl":null,"url":null,"abstract":"This paper presents a method to measure the CMTI performance of dual channel galvanically isolated gate drivers using transformers and filtering capacitors on the outputs. As a result, typical application CMTI conditions are replicated. The working principle was successfully verified using a 5 V and 50% duty cycle PWM pulse with 10 ns rise and fall times. Three commercially available dual channel galvanically isolated gate drivers were used to evaluate the proposed setup in comparison with the state-of-the-art approach. CMTI slopes of ±50 kV/μs, ±95 kV/μs, and ±125 kV/μs, together with a common mode pulse of ±1.5 kV were used in the assessment. The state-of-the-art method showed several CMTI failures, whereas the proposed setup passed all conditions.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Changing The Paradigm In Common Mode Transient Immunity (CMTI) Testing Of Dual Channel Galvanically Isolated Gate Drivers\",\"authors\":\"F. Vlădoianu, M. Strelec, I. Hurez, V. Anghel, G. Brezeanu\",\"doi\":\"10.1109/CAS52836.2021.9604169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a method to measure the CMTI performance of dual channel galvanically isolated gate drivers using transformers and filtering capacitors on the outputs. As a result, typical application CMTI conditions are replicated. The working principle was successfully verified using a 5 V and 50% duty cycle PWM pulse with 10 ns rise and fall times. Three commercially available dual channel galvanically isolated gate drivers were used to evaluate the proposed setup in comparison with the state-of-the-art approach. CMTI slopes of ±50 kV/μs, ±95 kV/μs, and ±125 kV/μs, together with a common mode pulse of ±1.5 kV were used in the assessment. The state-of-the-art method showed several CMTI failures, whereas the proposed setup passed all conditions.\",\"PeriodicalId\":281480,\"journal\":{\"name\":\"2021 International Semiconductor Conference (CAS)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAS52836.2021.9604169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS52836.2021.9604169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文提出了一种利用变压器和滤波电容在输出端测量双通道电隔离栅驱动器CMTI性能的方法。因此,可以复制典型的应用程序CMTI条件。利用5v、50%占空比、10ns上升和下降时间的PWM脉冲成功验证了工作原理。使用三个市售的双通道电隔离栅驱动器来评估所提出的设置,并与最先进的方法进行比较。采用±50 kV/μs、±95 kV/μs和±125 kV/μs的CMTI斜率和±1.5 kV的共模脉冲进行评价。最先进的方法显示了几个CMTI故障,而建议的设置通过了所有条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Changing The Paradigm In Common Mode Transient Immunity (CMTI) Testing Of Dual Channel Galvanically Isolated Gate Drivers
This paper presents a method to measure the CMTI performance of dual channel galvanically isolated gate drivers using transformers and filtering capacitors on the outputs. As a result, typical application CMTI conditions are replicated. The working principle was successfully verified using a 5 V and 50% duty cycle PWM pulse with 10 ns rise and fall times. Three commercially available dual channel galvanically isolated gate drivers were used to evaluate the proposed setup in comparison with the state-of-the-art approach. CMTI slopes of ±50 kV/μs, ±95 kV/μs, and ±125 kV/μs, together with a common mode pulse of ±1.5 kV were used in the assessment. The state-of-the-art method showed several CMTI failures, whereas the proposed setup passed all conditions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信