Novel ScAlN/Si SAW-type devices targeting surface acoustic wave/spin wave coupling

A. Nicoloiu, C. Nastase, I. Zdru, D. Vasilache, G. Boldeiu, M. Ciornei, A. Dinescu, A. Müller
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引用次数: 1

Abstract

This paper reports high frequency surface acoustic wave (SAW) devices developed on Sc doped (30%) AlN on high resistivity Si for demonstrating surface acoustic wave – spin wave coupling. Enhanced Q-factors were found for both propagation modes – Rayleigh (4.7 GHz) and Sezawa (8 GHz). SAW/SW (spin wave) coupling is proven for two-ports SAW structures having a magnetostrictive layer of Ni between the two interdigitated transducers (IDTs). A decrease of 3.42 dB was observed in the amplitude of the transmission parameter, at resonance, when the magnetic field was applied. The angle between the applied magnetic field and the SAW propagation direction is π/4.
针对表面声波/自旋波耦合的新型ScAlN/Si saw型器件
本文报道了在高电阻率Si上以Sc掺杂(30%)AlN为材料研制的高频表面声波(SAW)器件,用于证明表面声波-自旋波耦合。在Rayleigh (4.7 GHz)和Sezawa (8 GHz)两种传播模式下都发现了增强的q因子。在两个交叉换能器(idt)之间具有磁致伸缩层的双端口SAW结构中,已经证明了SAW/SW(自旋波)耦合。在磁场作用下,谐振时传输参数的幅值下降了3.42 dB。外加磁场与声表面波传播方向的夹角为π/4。
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