发布求助
文献互助 智能选刊 最新文献

2021 International Semiconductor Conference (CAS)最新文献

筛选
英文 中文
Structural and electrical characterization of V2O3 on various substrates: a comparative study 不同衬底上V2O3的结构和电学特性:比较研究
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604123
M. T. Sultan, K. Ignatova, U. Arnalds
{"title":"Structural and electrical characterization of V2O3 on various substrates: a comparative study","authors":"M. T. Sultan, K. Ignatova, U. Arnalds","doi":"10.1109/CAS52836.2021.9604123","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604123","url":null,"abstract":"We investigate the structural morphology and electrical characteristics i.e., metal-insulator transition (MIT) of V<inf>2</inf>O<inf>3</inf> thin films grown by high power impulse magnetron sputtering on Al<inf>2</inf>O<inf>3</inf>(c, r, m and a-plane), Si/SiO<inf>2</inf> and Si/ SiO<inf>2</inf> /TiO<inf>2</inf>. The MIT characteristics of films were linked to strain induced by substrate, growth temperature, the O<inf>2</inf> flow settings, the lattice parameters of grown films and the stoichiometry. Of the studied substrates, films grown on c-plane Al<inf>2</inf>O<inf>3</inf> and SiO<inf>2</inf> showed a dominant abrupt transition with a strong MIT. Tunning the electrical transition characteristics of films grown on r-plane reveals MIT characteristics at high growth temperatures at remarkably low O<inf>2</inf> flow settings compared to films grown on c-plane substrates.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121168503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A very low quiescent current linear voltage regulator with wide input voltage and wide load current range for automotive applications 一种非常低的静态电流线性稳压器，具有宽输入电压和宽负载电流范围，用于汽车应用
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604196
Ionuț-Alin Ilie, C. Zegheru, A. Bajenaru, G. Brezeanu
{"title":"A very low quiescent current linear voltage regulator with wide input voltage and wide load current range for automotive applications","authors":"Ionuț-Alin Ilie, C. Zegheru, A. Bajenaru, G. Brezeanu","doi":"10.1109/CAS52836.2021.9604196","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604196","url":null,"abstract":"This paper presents a very low quiescent current linear voltage regulator meant to supply a microcontroller in an automotive ECU. This is a 3 pins device which is always connected to battery, even when car’s engine is off and therefore a very low total current consumption for the block is desired. The regulator has a fixed 5V output voltage and a 0.5A maximum load current The proposed regulator, implemented in a 0.8µm BiCMOS technology, has a total quiescent current of 3.8µA (no load) and due to an adaptive biasing technique a 75µA is obtained at 500mA. Using a buffer block a PSRR of 65dB at 100Hz is obtained even with this very low quiescent current.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116370362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices Si1-xGex纳米颗粒在不同氧化物基质中的光致发光研究
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604131
M. T. Sultan, J. Gudmundsson, A. Manolescu, M. Ciurea, H. Svavarsson, S. Ingvarsson
{"title":"Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices","authors":"M. T. Sultan, J. Gudmundsson, A. Manolescu, M. Ciurea, H. Svavarsson, S. Ingvarsson","doi":"10.1109/CAS52836.2021.9604131","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604131","url":null,"abstract":"We investigate the photoluminescence properties of structures comprising of Si<inf>1-x</inf>Ge<inf>x</inf> nanoparticles (NPs) within SiO<inf>2</inf>, GeO<inf>2</inf>, TiO<inf>2</inf> and Ta<inf>2</inf>O<inf>5</inf> oxide matrices. Of the investigated structures, it was observed that the structures with GeO<inf>2</inf> and TiO<inf>2</inf> matrices provide increased spectral response (at ~907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"10 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121014355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Utilizing Differential Evolution for an Automated Compact Model Parameter Extraction 基于差分进化的紧凑模型参数自动提取
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604125
Marc Huppmann, Klaus-Willi Pieper, Andi Buzo, L. Maurer, G. Pelz
{"title":"Utilizing Differential Evolution for an Automated Compact Model Parameter Extraction","authors":"Marc Huppmann, Klaus-Willi Pieper, Andi Buzo, L. Maurer, G. Pelz","doi":"10.1109/CAS52836.2021.9604125","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604125","url":null,"abstract":"Parameter extraction is a challenging task, as it searches for a solution inside a high dimensional plus non-convex space. To be able to apply well known gradient based optimizers, the problem is dissected into multiple simpler yet intertwined tasks, which yields a complex and manual labour intensive procedure. On the contrary to gradient based methods, genetic algorithms perform excellent on global search problems, which eliminates the need for such a sophisticated workflow. In this paper a highly automated methodology is presented that is capable of replacing the standard manual extraction sequence for the BSIM MOSFET compact model. Due to its superior extreme finding behaviour, the Differential Evolution algorithm is applied in combination with a special error metric to ensure a high fitting quality, in all regions of the output and transfer curves. Repeatably good results for 20k measurement points are obtained, with a reduction of factor 10 in total fitting duration, while coincidentally consuming mostly computation instead of manual labour time.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114324289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling the temperature-dependent reverse breakdown behavior of GaAs PIN diodes 模拟GaAs PIN二极管的温度相关反向击穿行为
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604151
P. Scharf, F. A. Velarde Gonzalez, André Lange, M. Dietrich, V. Dudek
{"title":"Modeling the temperature-dependent reverse breakdown behavior of GaAs PIN diodes","authors":"P. Scharf, F. A. Velarde Gonzalez, André Lange, M. Dietrich, V. Dudek","doi":"10.1109/CAS52836.2021.9604151","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604151","url":null,"abstract":"The demands on modern electronics are constantly increasing. In the field of power electronics, the semiconductor material gallium arsenide (GaAs) is gaining more and more popularity. In this work, a first GaAs PIN Diode for 900 V operation is under investigation. With the help of simulations and measurements, the temperature-dependent reverse breakdown behavior is investigated. An analytical model will be presented, which can reproduce this behavior.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131853340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detecting anomalous behavior in Si MOS capacitors 检测Si MOS电容器的异常行为
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604132
R. Pascu, G. Pristavu, M. Kusko, F. Draghici, G. Brezeanu
{"title":"Detecting anomalous behavior in Si MOS capacitors","authors":"R. Pascu, G. Pristavu, M. Kusko, F. Draghici, G. Brezeanu","doi":"10.1109/CAS52836.2021.9604132","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604132","url":null,"abstract":"Si MOS capacitors are fabricated in order to assess electrical behavior. High-frequency capacitance-voltage measurements, performed in the 60 – 500 K range exhibit anomalous behavior both at low (60 – 200 K) and high (460 – 500K) temperatures. “Inversion” points on the C-V curves are identified for these ranges, which move towards positive values as temperature rises. This behavior is explainable, for the high-temperature region, by the significant increase in minority carriers. In order to elucidate low-temperature behavior, the flat-band voltage variation is correlated to the shift in relative Fermi level position. The analysis suggests an important density of interface states in the Si band gap, on different energy levels, mostly near the conduction band. These traps can be activated even at cryogenic temperatures and have a dominant effect on MOS structure capacitance, especially as the dopant carrier concentration drops, with freeze out occurring under 65K.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"371 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132603368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Memory properties of GeZrO2 based trilayer structure 基于GeZrO2的三层结构的记忆性能
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604154
C. Palade, A. Slav, M. Ciurea
{"title":"Memory properties of GeZrO2 based trilayer structure","authors":"C. Palade, A. Slav, M. Ciurea","doi":"10.1109/CAS52836.2021.9604154","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604154","url":null,"abstract":"The memory properties of a trilayer structure of ZrO2/Ge-ZrO2/ZrO2/Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition followed by a rapid thermal annealing process for obtaining Ge nanocrystals embedded in ZrO2 matrix. The X-ray diffraction patterns obtained on annealed structures show that both trilayer structures are cristallized, with narrow diffraction peaks. Ge as a separated phase is not evidenced in the diffractograms, instead is possible that Ge atoms enters in ZrO2 lattice structure and form a compound of ZrO3GeO8 crystallized in the tetragonal phase. In the case of ZrO2 control structure, the diffractograms show that the ZrO2 layer is crystallized in tetragonal phase. The memory properties are evidenced by C-V characteristics with counterclockwise hysteresis loop and a memory window of ΔV= 1.1V for the structure annealed at 570 °C and ΔV= 0.8 V for the structure annealed at 650 °C. The influence of the interface SiO2 layer on the frequency dependence of capacitance was evidenced by C-f characteristics.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130932228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TCAD study of latch-up sensitivity to wafer thinning below 500 nm 晶圆在500 nm以下减薄时锁存灵敏度的TCAD研究
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604133
G. Hiblot, K. Serbulova, G. Hellings, Shih-Hung Chen
{"title":"TCAD study of latch-up sensitivity to wafer thinning below 500 nm","authors":"G. Hiblot, K. Serbulova, G. Hellings, Shih-Hung Chen","doi":"10.1109/CAS52836.2021.9604133","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604133","url":null,"abstract":"The sensitivity of latch-up to wafer thickness is investigated with TCAD simulations. The dependency of bipolar and well resistances on substrate thickness is first evaluated, and later used to assess the loop gain of the latch-up circuit. Transient simulations are finally employed to assess the latch-up resilience as a function of substrate thickness.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"57 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114003743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A novel approach to the stability analysis of conditionally stable circuits 条件稳定电路稳定性分析的一种新方法
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604203
Valentin Beleca, C. Pleşa, R. Onet, M. Neag
{"title":"A novel approach to the stability analysis of conditionally stable circuits","authors":"Valentin Beleca, C. Pleşa, R. Onet, M. Neag","doi":"10.1109/CAS52836.2021.9604203","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604203","url":null,"abstract":"This paper presents an intuitive analysis of a class of conditionally stable feedback circuits, that are stable although the Bode stability criteria indicates otherwise: at the frequencies their loop gain phase characteristics first reach -180°, the magnitudes of their magnitude characteristics are far larger than unity. An easy-to-use stability criterion is introduced by means of two circuit examples. Only the usual loop gain Bode plots are required to apply this criterion, but it suits only conditionally stable systems with no right-hand plane (RHP) poles in the open loop transfer function, T(s), and no integrators. A separate, three-step method for assessing the stability of feedback circuits with RHP poles and integrators is also proposed. It applies to all conditionally stable circuits and involves extracting the poles and zeros of T(s) and plotting the corresponding Nyquist contour.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"106 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131957428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Estimation of contact resistance in four terminal amorphous IGZO thin film transistor 四端非晶IGZO薄膜晶体管接触电阻的估算
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604146
N. Firoz, Shivam Singh, B. Mazhari
{"title":"Estimation of contact resistance in four terminal amorphous IGZO thin film transistor","authors":"N. Firoz, Shivam Singh, B. Mazhari","doi":"10.1109/CAS52836.2021.9604146","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604146","url":null,"abstract":"Accurate electrical characterization of thin film transistor (TFT), requires measurement of its contact resistance. This work describes experimental extraction of contact resistance in top contact a-IGZO TFTs using a four-terminal structure. The auxiliary contact terminal is deposited adjacent to source away from the channel region and kept electrically floating leading to unperturbed device operation. A simplified transmission-line model of source contact relates the open-circuit voltage measured at the floating terminal with the total resistance of the transistor to directly give estimates of the contact resistance. Contact resistance corrected values of threshold voltage and field-effect mobility were extracted as 4 V and 3.2 cm2 V−1 s−1 respectively whereas the uncorrected values were 1 V and 2.4 cm2 V−1 s−1.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"443 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125766695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信