模拟GaAs PIN二极管的温度相关反向击穿行为

2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI:10.1109/CAS52836.2021.9604151

P. Scharf, F. A. Velarde Gonzalez, André Lange, M. Dietrich, V. Dudek

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引用次数: 0

摘要

对现代电子产品的要求不断增加。在电力电子领域，半导体材料砷化镓(GaAs)越来越受到人们的青睐。在这项工作中，第一个用于900 V工作的GaAs PIN二极管正在研究中。通过模拟和测量，研究了随温度变化的反向击穿行为。将提出一个分析模型，它可以再现这种行为。

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Modeling the temperature-dependent reverse breakdown behavior of GaAs PIN diodes

The demands on modern electronics are constantly increasing. In the field of power electronics, the semiconductor material gallium arsenide (GaAs) is gaining more and more popularity. In this work, a first GaAs PIN Diode for 900 V operation is under investigation. With the help of simulations and measurements, the temperature-dependent reverse breakdown behavior is investigated. An analytical model will be presented, which can reproduce this behavior.

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2021 International Semiconductor Conference (CAS)

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