M. T. Sultan, J. Gudmundsson, A. Manolescu, M. Ciurea, H. Svavarsson, S. Ingvarsson
{"title":"Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices","authors":"M. T. Sultan, J. Gudmundsson, A. Manolescu, M. Ciurea, H. Svavarsson, S. Ingvarsson","doi":"10.1109/CAS52836.2021.9604131","DOIUrl":null,"url":null,"abstract":"We investigate the photoluminescence properties of structures comprising of Si<inf>1-x</inf>Ge<inf>x</inf> nanoparticles (NPs) within SiO<inf>2</inf>, GeO<inf>2</inf>, TiO<inf>2</inf> and Ta<inf>2</inf>O<inf>5</inf> oxide matrices. Of the investigated structures, it was observed that the structures with GeO<inf>2</inf> and TiO<inf>2</inf> matrices provide increased spectral response (at ~907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"10 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS52836.2021.9604131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We investigate the photoluminescence properties of structures comprising of Si1-xGex nanoparticles (NPs) within SiO2, GeO2, TiO2 and Ta2O5 oxide matrices. Of the investigated structures, it was observed that the structures with GeO2 and TiO2 matrices provide increased spectral response (at ~907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.