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2021 International Semiconductor Conference (CAS)最新文献

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RFID tag with electromagnetic wave polarization diversity 具有电磁波极化分集的RFID标签
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604122
D. Neculoiu, A. Bunea
{"title":"RFID tag with electromagnetic wave polarization diversity","authors":"D. Neculoiu, A. Bunea","doi":"10.1109/CAS52836.2021.9604122","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604122","url":null,"abstract":"The paper presents a solution to the interference of incident and reflected waves in backscattering RFID systems. The concept is validated using microstrip patch antennas and a FR-4 double clad substrate. The tag system is designed for 5 GHz and measurement results confirm the potential of the proposed approach.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116212602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Facile formation of self-assembled Ga droplets on GaAs (001) substrate 在GaAs(001)衬底上容易形成自组装的Ga液滴
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604129
M. T. Sultan, H. Árnason, S. Ingvarsson, U. Arnalds, H. Svavarsson, A. Manolescu, Á. Valfells
{"title":"Facile formation of self-assembled Ga droplets on GaAs (001) substrate","authors":"M. T. Sultan, H. Árnason, S. Ingvarsson, U. Arnalds, H. Svavarsson, A. Manolescu, Á. Valfells","doi":"10.1109/CAS52836.2021.9604129","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604129","url":null,"abstract":"We investigate the formation and evolution of Ga droplets over GaAs (001) substrate with and without Ge top layer (8 nm). Various morphological transformation from holes to droplets formation were observed as a function of annealing parameters. It was observed that the application of Ge layer plays a vital role in incorporating oxygen into the system. Moreover, a potential application of these structures as a photocathode is discussed, demonstrating increased photoemission.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131529521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of a ITO/PEDOT:PSS/ZnPc:I2/Al Schottky diode solar cells using Solution Technique 溶液法制备ITO/PEDOT:PSS/ZnPc:I2/Al肖特基二极管太阳能电池
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604121
I. Gadiac, V. Furtuna, T. Potlog
{"title":"Fabrication of a ITO/PEDOT:PSS/ZnPc:I2/Al Schottky diode solar cells using Solution Technique","authors":"I. Gadiac, V. Furtuna, T. Potlog","doi":"10.1109/CAS52836.2021.9604121","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604121","url":null,"abstract":"We describe a Schottky solar cell based on the ZnPc semiconductor thin film. The influence of iodine (I2) on the structural, optical properties of ZnPc thin films and on photovoltaic parameters of a ITO/PEDOT:PSS/ZnPc:I2/Al Schottky diode solar cells has been investigated. Current density-voltage (J-V) characteristic of the synthetized device are measured under illumination 100 mW/cm2, at 300 K. The photovoltaic parameters such as short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) are estimated. The measured power conversion efficiency is limited by the series and shunt resistance.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121385692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photocatalytic activity and stability of the ZnO-GO composite thin films ZnO-GO复合薄膜的光催化活性和稳定性
2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI: 10.1109/CAS52836.2021.9604130
C. Bogatu, S. Gheorghita, D. Perniu, C. Obreja, O. Buiu, A. Duţă
{"title":"Photocatalytic activity and stability of the ZnO-GO composite thin films","authors":"C. Bogatu, S. Gheorghita, D. Perniu, C. Obreja, O. Buiu, A. Duţă","doi":"10.1109/CAS52836.2021.9604130","DOIUrl":"https://doi.org/10.1109/CAS52836.2021.9604130","url":null,"abstract":"This study investigates the photocatalytic activity and long-term stability of a two layered Vis-active composite thin films ZnO/ZnO-GO: (a) under UV+VIS irradiation (55W/m2) and (b) under 100% UV (3W/ m2), for up to 48 h, using methylene blue (c = 10 ppm) as standard pollutant. The photocatalysts stability is discussed considering the variation in transmittance and roughness (RMS) before/after photocatalysis correlated with the processes affecting the photocatalyst surfaces. The photo-degradation efficiencies reach 98% after 48h under UV+VIS irradiation for the thin film sprayed on a thinner ZnO layer; that was also the mostly stable film, with low transmittance (<10 %) and RMS (<10 nm) variations before/after 48 h of UV+VIS irradiation.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123338984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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