在GaAs(001)衬底上容易形成自组装的Ga液滴

2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI:10.1109/CAS52836.2021.9604129

M. T. Sultan, H. Árnason, S. Ingvarsson, U. Arnalds, H. Svavarsson, A. Manolescu, Á. Valfells

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引用次数: 0

摘要

我们研究了在GaAs(001)衬底上有和没有Ge顶层(8 nm)的Ga液滴的形成和演化。观察到从孔洞到液滴形成的各种形态变化是退火参数的函数。结果表明，Ge层的应用对氧的加入起着至关重要的作用。此外，还讨论了这些结构作为光电阴极的潜在应用，显示出增加的光电发射。

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Facile formation of self-assembled Ga droplets on GaAs (001) substrate

We investigate the formation and evolution of Ga droplets over GaAs (001) substrate with and without Ge top layer (8 nm). Various morphological transformation from holes to droplets formation were observed as a function of annealing parameters. It was observed that the application of Ge layer plays a vital role in incorporating oxygen into the system. Moreover, a potential application of these structures as a photocathode is discussed, demonstrating increased photoemission.

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2021 International Semiconductor Conference (CAS)

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