{"title":"Fabrication of a ITO/PEDOT:PSS/ZnPc:I2/Al Schottky diode solar cells using Solution Technique","authors":"I. Gadiac, V. Furtuna, T. Potlog","doi":"10.1109/CAS52836.2021.9604121","DOIUrl":null,"url":null,"abstract":"We describe a Schottky solar cell based on the ZnPc semiconductor thin film. The influence of iodine (I2) on the structural, optical properties of ZnPc thin films and on photovoltaic parameters of a ITO/PEDOT:PSS/ZnPc:I2/Al Schottky diode solar cells has been investigated. Current density-voltage (J-V) characteristic of the synthetized device are measured under illumination 100 mW/cm2, at 300 K. The photovoltaic parameters such as short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) are estimated. The measured power conversion efficiency is limited by the series and shunt resistance.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS52836.2021.9604121","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We describe a Schottky solar cell based on the ZnPc semiconductor thin film. The influence of iodine (I2) on the structural, optical properties of ZnPc thin films and on photovoltaic parameters of a ITO/PEDOT:PSS/ZnPc:I2/Al Schottky diode solar cells has been investigated. Current density-voltage (J-V) characteristic of the synthetized device are measured under illumination 100 mW/cm2, at 300 K. The photovoltaic parameters such as short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) are estimated. The measured power conversion efficiency is limited by the series and shunt resistance.