Si1-xGex纳米颗粒在不同氧化物基质中的光致发光研究

2021 International Semiconductor Conference (CAS) Pub Date : 2021-10-06 DOI:10.1109/CAS52836.2021.9604131

M. T. Sultan, J. Gudmundsson, A. Manolescu, M. Ciurea, H. Svavarsson, S. Ingvarsson

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引用次数: 0

摘要

我们研究了Si1-xGex纳米颗粒(NPs)在SiO2、GeO2、TiO2和Ta2O5氧化物基体中的光致发光特性。在所研究的结构中，以GeO2和TiO2为基体的结构具有更高的光谱响应(分别在~907和844 nm处)和更高的PL强度。PL特性的改善归因于对氧的扩散屏障的增加，否则会导致在膜-氧化物界面形成不需要的氧化物，从而恶化光学性能。

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Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices

We investigate the photoluminescence properties of structures comprising of Si1-xGex nanoparticles (NPs) within SiO2, GeO2, TiO2 and Ta2O5 oxide matrices. Of the investigated structures, it was observed that the structures with GeO2 and TiO2 matrices provide increased spectral response (at ~907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.

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2021 International Semiconductor Conference (CAS)

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