{"title":"A Capacitor-less LDO with High PSR over a wide frequency range","authors":"Iulian Sularea, C. Răducan, M. Neag","doi":"10.1109/CAS52836.2021.9604164","DOIUrl":null,"url":null,"abstract":"This paper presents a capacitor-less low dropout (LDO) voltage PMOS regulator with high power supply rejection (PSR). The proposed LDO combines into a single core two differential stages: a primary one - as error amplifier for the negative feedback loop - and a secondary one, used to create a feedforward cancellation path from the supply to the gate of the pass transistor. With this arrangement the LDO can provide a PSR of -43dB at 1MHz for the maximum load current of 50mA. This performance is achieved with only 20µA quiescent current and a load capacitor of 100pF. The LDO is designed in a 0.18µm standard CMOS process.","PeriodicalId":281480,"journal":{"name":"2021 International Semiconductor Conference (CAS)","volume":"16 9-12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAS52836.2021.9604164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a capacitor-less low dropout (LDO) voltage PMOS regulator with high power supply rejection (PSR). The proposed LDO combines into a single core two differential stages: a primary one - as error amplifier for the negative feedback loop - and a secondary one, used to create a feedforward cancellation path from the supply to the gate of the pass transistor. With this arrangement the LDO can provide a PSR of -43dB at 1MHz for the maximum load current of 50mA. This performance is achieved with only 20µA quiescent current and a load capacitor of 100pF. The LDO is designed in a 0.18µm standard CMOS process.