A Capacitor-less LDO with High PSR over a wide frequency range

Iulian Sularea, C. Răducan, M. Neag
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引用次数: 1

Abstract

This paper presents a capacitor-less low dropout (LDO) voltage PMOS regulator with high power supply rejection (PSR). The proposed LDO combines into a single core two differential stages: a primary one - as error amplifier for the negative feedback loop - and a secondary one, used to create a feedforward cancellation path from the supply to the gate of the pass transistor. With this arrangement the LDO can provide a PSR of -43dB at 1MHz for the maximum load current of 50mA. This performance is achieved with only 20µA quiescent current and a load capacitor of 100pF. The LDO is designed in a 0.18µm standard CMOS process.
在宽频率范围内具有高PSR的无电容LDO
本文提出了一种具有高电源抑制(PSR)的无电容低差(LDO)电压PMOS稳压器。所提出的LDO将两个差分级合并为单个核心:一个初级级-作为负反馈环路的误差放大器-和一个次级级,用于创建从电源到通晶体管栅极的前馈抵消路径。通过这种安排,LDO可以在1MHz时提供-43dB的PSR,最大负载电流为50mA。该性能仅在20 μ A静态电流和100pF负载电容的情况下实现。LDO采用0.18µm标准CMOS工艺设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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