Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)最新文献

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Package related reliability investigation with a multi-sensor chip 基于多传感器芯片的封装可靠性研究
R. van Gestel, L. van Gemert, E. Bagerman
{"title":"Package related reliability investigation with a multi-sensor chip","authors":"R. van Gestel, L. van Gemert, E. Bagerman","doi":"10.1109/ECTC.1993.346817","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346817","url":null,"abstract":"To perform IC package related reliability research a test chip has been developed containing a large number of test structures. The structures are connected to multiplexing logic for performing electrical measurements. The chips have been used in a case study where PLCC 68 devices were stressed with a 500 Temperature Cycle Test and a 300 hours Highly Accelerated Stress Test. All the test structures are sensitive for open/short failures and were measured to monitor their behaviour. Acoustical scanning of the packages was used to measure die-surface delamination. The measurement of chip-package reliability is discussed in relation to the variance of the measurement results over the used chips in these reliability tests.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127763941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High, performance optical data link array technology 高性能光数据链路阵列技术
R. A. Nordin, D. B. Buchholz, R. F. Huisman, N. Basavanhally, A. Levi
{"title":"High, performance optical data link array technology","authors":"R. A. Nordin, D. B. Buchholz, R. F. Huisman, N. Basavanhally, A. Levi","doi":"10.1109/ECTC.1993.346758","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346758","url":null,"abstract":"Demands for increased interconnection density and higher bandwidth, coupled with stringent cost constraints of advanced wide bandwidth telecommunication switching and high throughput computer architectures, are exhausting conventional electrical interconnection capabilities. The requirement for greater interconnection capabilities, spawned in part by the advances in integrated circuit technologies and the need for enhanced digital services, dictate that technology advancement must occur in traditional electronic packaging and/or interconnection techniques. The resolution of these technological needs is paramount for the successful competitive introduction of these systems. Presently, a \"bottle-neck\" occurs at the board-to-board level of the interconnection hierarchy, Therefore, an opportunity exists for the development of new parallel optical interconnection techniques which can be incorporated into system designs beginning at this interconnection level and beyond. The strategic insertion of parallel optical interconnection technology into these electronic processing systems not only meets projected performance requirements, but potentially offers them at a competitive cost.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128113449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Qualification testing of automotive terminals for high reliability applications 用于高可靠性应用的汽车接线端子的鉴定试验
P. Lees
{"title":"Qualification testing of automotive terminals for high reliability applications","authors":"P. Lees","doi":"10.1109/ECTC.1993.346850","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346850","url":null,"abstract":"The increasing sophistication of automotive electronic systems has presented some unique challenges to both the connector designer and the materials engineer. The automotive environment is abusive, yet reliability must be maintained over extended periods of time. For example, the life of safety related components must exceed the life of the vehicle. Automotive components are subjected to random vibration, thermal excursions, corrosive gasses, humidity and increasingly prolonged exposures to elevated temperatures. To determine the reliability of a connector design, comprehensive test specifications have evolved. A typical battery of tests includes, random vibration, temperature cycling with humidity, exposure to mixed flowing gas and thermal aging. This study examines the effect of contact finish on the performance of an automotive terminal. The contact finish was varied to explore cost reduction opportunities. The terminals were subjected to low cycle durability testing, temperature cycling with humidity, random vibration, and Battelle flowing mixed gas environments. System stability was evaluated in terms of low level circuit resistance changes. Test results are presented and the data indicate different responses depending on the contact finish properties. It was found that the performance of a thin, multi-layer clad inlay contact material met all test requirements and offered the lowest total system cost.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133961502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
New collimating lens systems for laser diode package 用于激光二极管封装的新型准直透镜系统
Y. Yagiu, T. Kumazawa, M. Shimaoka
{"title":"New collimating lens systems for laser diode package","authors":"Y. Yagiu, T. Kumazawa, M. Shimaoka","doi":"10.1109/ECTC.1993.346692","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346692","url":null,"abstract":"The design of a new collimating lens system for a laser diode package for optical communication is discussed. This collimating lens system achieves enough space between the laser chip and the lens, with the beam diameter smaller than the effective diameter of the isolator. This system consists of two lenses. For beam angle deviations caused by misalignments of the laser diode and the lens system, the relationships between the beam diameter and the beam angle deviation ratios are the same as those of the conventional lens system. It is demonstrated that making the beam diameter small decreases the beam angle deviation ratios. This result is useful for designing a laser diode package.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134389252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Failure analysis mechanisms of miniaturized multilayer ceramic capacitors under normal service conditions 小型化多层陶瓷电容器在正常使用条件下的失效机理分析
Y. Chan, F. Yeung
{"title":"Failure analysis mechanisms of miniaturized multilayer ceramic capacitors under normal service conditions","authors":"Y. Chan, F. Yeung","doi":"10.1109/ECTC.1993.346689","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346689","url":null,"abstract":"The authors report on failure analysis results on miniaturized multilayer ceramic capacitors ('0402', '0603', '0805', and '1206' sizes) which have been subjected to various degrees of thermal shock up to 450/spl deg/C by ice-water or dry-ice quenching. The thermal shock resistance of '0402' multilayer ceramic capacitors is found to be about 400/spl deg/C and considerably better than that of the larger ones. Microstructural and layer-by-layer insulation resistance analyses have clearly identified the physical locations responsible for the electrical leakage of defective capacitors. No evidence of silver migration as a dominant failure mechanism has been observed for any of the defective capacitors under usual operating stresses. Comparisons of I-V characteristics for multilayer ceramic capacitors quenched by ice water and dry ice confirm that water plays a significant role in causing electrical failure at nominal bias. Failure mechanisms are then proposed to explain the failure of miniaturized multilayer ceramic capacitors under normal service conditions.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133298768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Thermal and mechanical analysis of flip-chips on a liquid-cooled multichip module 液体冷却多芯片模块倒装芯片的热与力学分析
R. Narayanan, P. Hall, R. Chanchani
{"title":"Thermal and mechanical analysis of flip-chips on a liquid-cooled multichip module","authors":"R. Narayanan, P. Hall, R. Chanchani","doi":"10.1109/ECTC.1993.346856","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346856","url":null,"abstract":"In this paper, thermal analysis of a three dimensional quarter model of a 156 pad flip-chip on a liquid cooled multichip module with 75 other chips is simulated using COSMOS-finite element software. Both flip-chip (pad grid array type) and TAB type of interconnections are used for the module. The total power on the board is 134 watts, the flip-chips generating up to 1.5 watts each and the one TAB type generating 12 watts. Each chip can be modeled independently due to the absence of cross-heating by its neighbors. Forced convection liquid cooling using an organic coolant with various flow rates and thus various convection coefficients is used for the study. The temperature rise in the boundary layer of the coolant was 8/spl deg/F at the coolant flow rate of 0.073 gallons per minute for the flip-chip with 1.5 watts. The maximum thermal strains calculated were found to be 0.37% (if the temperature of zero strain is assumed to be 0/spl deg/F, and Young's modulus of solder is 2 Mpsi). The maximum shears were found in the corner bump, and they differed from the next bump by 20%. Polyimide layers above and below the solder bumps were found to contribute about 80% of the thermal resistance. These results are used in a Coffin-Manson analysis to predict adequate life (cycles) for the high lead solder bumps (95%Pb-5%Sn).<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114651414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Macromodels for generating signal integrity and timing management advice for package design 用于生成信号完整性和时序管理建议的宏模型
P. Franzon, S. Simovich, S. Mehrotra, M. Steer
{"title":"Macromodels for generating signal integrity and timing management advice for package design","authors":"P. Franzon, S. Simovich, S. Mehrotra, M. Steer","doi":"10.1109/ECTC.1993.346796","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346796","url":null,"abstract":"The electrical design of packaging for high speed digital systems requires intensive efforts on the part of signal integrity engineers. We have produced a set of tools that assist these engineers in efficiently producing PCB and MCM designs that meet timing and other electrical needs. This paper describes the most important aspect of this solution, the internal 'macromodels' that accurately capture the relationships between electrical/timing design and the package physical design (or layout).<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114653652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A drawback of converting to a low stress molding compound 转换成低应力成型化合物的缺点
C. Virojanapa, M. Hadkeaw, D. Kane
{"title":"A drawback of converting to a low stress molding compound","authors":"C. Virojanapa, M. Hadkeaw, D. Kane","doi":"10.1109/ECTC.1993.346779","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346779","url":null,"abstract":"This paper presents a failure mechanism resulting in interfacial cracks and broken wedge bonds that was occasionally encountered on some plastic DIPs with large leadframe paddle upon conversion to a lower stress molding compound. The root cause of the problem was a pull force during leads forming in excess of the strength of the center lead/wedge bond/molding compound structure. The paper-shows how acoustic microscopy and finite element analysis enabled the elimination of the problem via optimization of the packaging processes and redesign of some leadframes.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114680567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-density high-performance flexible cables for digital applications 用于数字应用的高密度高性能柔性电缆
A. Deutsch, G. Arjavalingam, C. Surovic, J. K. Tam, G. Kopcsay, D. W. Dranchak, J.B. Gillett
{"title":"High-density high-performance flexible cables for digital applications","authors":"A. Deutsch, G. Arjavalingam, C. Surovic, J. K. Tam, G. Kopcsay, D. W. Dranchak, J.B. Gillett","doi":"10.1109/ECTC.1993.346781","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346781","url":null,"abstract":"In this paper we investigate the range of usage for high-density flexible cables in high-performance applications. We characterize the electrical performance of a test vehicle containing several flexible transmission line structures built on a Kapton film. The results of time-domain measurements with a novel short-pulse propagation technique are presented. 15 ps and 35 ps risetime sources are launched on the experimental structures. This broad-band measurement technique is used to determine frequency-dependent characteristics up to 25 GHz. It is shown that in order to compete with coaxial cables or optical interconnections, an asymmetrical shielded triplate design needs to be used for flexible-film cables. Such a structure offers very low crosstalk, controlled impedance, no radiation and relatively inexpensive fabrication. Based on the experimentally developed models, it is predicted that flexible-film cables can transfer data at 1 Gb/s rates, with lengths of up to 83-165 cm when the line widths are in the range of 55-212 /spl mu/m.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"606 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117348273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Feasibility study on through-wafer interconnecting method for hybrid wafer-scale-integration 混合晶圆规模集成的晶圆互连方法可行性研究
Y. Fujita, Y. Kawamura, K. Mizuishi
{"title":"Feasibility study on through-wafer interconnecting method for hybrid wafer-scale-integration","authors":"Y. Fujita, Y. Kawamura, K. Mizuishi","doi":"10.1109/ECTC.1993.346701","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346701","url":null,"abstract":"A novel soldering technique for connecting input/output (I/O) pins on the back side of the wafer is described. After the preforms between the through-holes etched into the silicon wafer and the I/O pins are melted in vacuum (about 1 torr), the vacuum is released to make the solder flow into the through-hole area, soldering the I/O pins to the metallization layer on the active devices. This process provides reliable and highly conductive metal interconnection through the wafer because a virtually voidless solder layer is formed without the use of flux. The percentage of void-free through-holes is 95%, and the resistance of each through-hole is 10-15 m/spl Omega/. It is demonstrated that this method provides ideal interconnections for hybrid wafer-scale integration.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122100567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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