{"title":"A Variable Gain and Bandwidth Fully Differential CMOS Neural Preamplifier","authors":"Luciano S. Martínez Rau","doi":"10.1109/CAE48787.2020.9046363","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046363","url":null,"abstract":"The design of a low noise low power fully-differential CMOS preamplifier for bioelectrical signals recording applications is presented. The capacitive-coupled and capacitive-feedback topology is adopted. The amplifier current consumption is $5.2 mu mathrm{A}$ or $18.2 mu mathrm{A}$ at 3 V supply for a mid-band gain of 39.4 dB or 25.9 dB, respectively. Each corner frequency is 2-bit programmable for amplifying biosignals located in different bands. The bandwidth can be extend from 0.15 Hz - 2.68 kHz to 0.03 Hz - 40.4 kHz. To avoid possible saturation at the differential output, a discharged switch is incorporated. The circuit has an input-referred noise of $2.99 mu text{Vrms}$ integrated from 0.1 Hz to 10 kHz. It was designed and simulated using $0.5 mu mathrm{m}$ 3M2P CMOS process. The circuit is in the manufacturing process.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127947364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The new data acquisition system of the LAGO Collaboration based on the Redpitaya board","authors":"L. H. Arnaldi, D. Cazar, M. Audelo, I. Sidelnik","doi":"10.1109/CAE48787.2020.9046374","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046374","url":null,"abstract":"The present work describes the results obtained in the development of the new Data Acquisition System (DAQ) that will be used by the Latin American Giant Observatory (LAGO) Collaboration. According to the requirements of the Water Cherenkov Detectors (WCD) used in LAGO, the new system must be capable of recording fast pulses (∼ns) from a photomultiplier (PMT), control the high voltage level applied to it, in addition to monitoring the atmospheric conditions in which the data were taken. Some figures of merit are shown, indicating the performance of the new system working with a WCD. The DAQ is based on a commercial board plus a custom-made interface board. This implementation includes scalers, sub-scalers, an automatic baseline correction algorithm, pressure & temperature sensing, geolocalization, an external trigger and the capability to set and monitor the high voltage applied to the PMT. The flexibility in the design of the system allows to adapt it to different particle detector technologies, such as silicon photomultipliers, resistive plate chambers and scintillators. Preliminary results prove the validity, reliability and high performance of the system.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"265 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132473884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An Integrated 350V Dimmer","authors":"Fabián Torres, J. Gak, A. Arnaud, M. Miguez","doi":"10.1109/CAE48787.2020.9046362","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046362","url":null,"abstract":"The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm2 without pads.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114152711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. De Micco, Carlos Minchola, John J. Leon-Franco, E. Boemo, M. Antonelli
{"title":"An annotated guide to utilize ring-oscillators as thermal sensor in FPGA technology","authors":"L. De Micco, Carlos Minchola, John J. Leon-Franco, E. Boemo, M. Antonelli","doi":"10.1109/CAE48787.2020.9046367","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046367","url":null,"abstract":"Ring Oscillators (ROs) are established as practical thermal sensors in Field Programmable Gate Array (FPGA) devices. Despite its proven technical usefulness in low-power design and thermal aspects of integrated circuit, a detailed standard procedure is not found in the literature. In this paper we present an optimized scheme including a detailed description of all elements and considerations, so those interested can quickly incorporate these ideas. Also, we show implementation, calibration and resources performing a characterization of a Xilinx Spartan 6 device.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122826980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of ESD protections for ECG applications","authors":"Pablo J. Gardella, Eduardo Baez, J. Cesaretti","doi":"10.1109/CAE48787.2020.9046370","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046370","url":null,"abstract":"This paper presents the design of Electrostatic Discharge (ESD) protections for a remote Electroencephalograph (ECG). Design and layout guidelines are analyzed to improve the ESD robustness of a Grounded-Gate NMOS (GGNMOS) cell based on a single well CMOS-only process. Experimental validation is done by means of a Time Domain Reflectometry (TDR) technique known as Transmission Line Pulse (TLP) testing. The silicon implementation of the proposed design passes ±3700V in the Human-Body Model (HBM).","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124383050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Pazos, Juan J. Baudino, Matías N. Joglar, F. Aguirre, C. Navarro, F. Palumbo, F. Silveira
{"title":"Sensitive Devices and Phase Noise Degradation Mechanisms on all-NMOSFET RF VCO Aging","authors":"S. Pazos, Juan J. Baudino, Matías N. Joglar, F. Aguirre, C. Navarro, F. Palumbo, F. Silveira","doi":"10.1109/CAE48787.2020.9046373","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046373","url":null,"abstract":"Device level reliability is introduced into simulations of an optimized all-NMOSFET, cross-coupled, radiofrequency Voltage Controlled Oscillator to trace the sensitive devices and parameters that reduce circuit performance over time. Parametric DC time dependent degradation is considered in all the devices of the circuit along with correlated flicker and thermal noise increase under hot carrier injection stress. Results show that, rather than the changes introduced by stress on DC parameters, the proposed topology is very sensitive to device level noise increase due to stress-induced traps, particularly at early stages of circuit life. This highlights the requirement of a unified simulation framework that takes into account not only DC/AC small signal degradation models but also device noise degradation in noise sensitive circuits.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129032011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Rizk, P. Julián, A. Pasciaroni, H. Radhakrishnan, J. Wilson, P. Pouliquen
{"title":"Device Mismatching and Random Telegraph Signal In Digital Pixel Imagers On 90-nm CMOS Process","authors":"C. Rizk, P. Julián, A. Pasciaroni, H. Radhakrishnan, J. Wilson, P. Pouliquen","doi":"10.1109/CAE48787.2020.9046364","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046364","url":null,"abstract":"The interest and need for more digital processing and functionality in the readout circuits continue to grow rapidly while the pixel pitch is getting smaller and this trend continues from visible to long wave IR. For a fully digital design (i.e. A/D in the pixel), the digital circuit can consume a large portion of the available space depending on the process feature size, effective well capacity (absolute dynamic range), and in-pixel functionality. The upside is that the digital circuit scales with the process node. The down side is limiting available space for the analog (front end) portion of the pixel limiting the designs to CMOS processes with smaller feature size. As we previously reported on 55- and 65-nm designs, this paper shows results from two imagers fabricated on the 90-nm process. In addition to Random Telegraph Signal/Noise (RTS/N), this paper compares non-uniformity between the two designs with device mismatching being the main culprit.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115375248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"System-on-Chip Implementation of a Self-Configuration System for a Programmable Photodetector ASIC","authors":"Lucas Mombello, Nicolás Calarco, F. P. Quintian","doi":"10.1109/CAE48787.2020.9046361","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046361","url":null,"abstract":"In this work a self-configuration system for a photodetector sensor with programmable pixels is presented. The design is part of an optical encoder based on a non-diffractive light beam. The self-configuration is a routine of configurations, readings and successive reconfigurations whose main purpose is finding the center of the non-diffractive beam incident on the sensor, and then configure around it the detection pattern. This algorithm is implemented on a Zynq-7000 SoC and makes it possible to automate the alignment of the beam with the detection pattern, without using micrometric positioning procedures.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129811630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"MOS Devices and Integrated Circuits for Ionizing Radiation Dosimetry: a Review","authors":"M. Garcia-Inza, S. Carbonetto, A. Faigón","doi":"10.1109/CAE48787.2020.9046369","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046369","url":null,"abstract":"In this paper we review the main aspects of MOS dosimetry. MOS dosimeters have been used for the last 50 years, and its performance has improved since then. To understand how a MOS dosimeter works its limitations and the different strategies to overcome them, it is important to overview the radiation effects in the MOS structure and how it can be used for dose estimation. Different reading methods are presented that improve some aspects of the performance of the MOS dosimeter, such as its lifespan or the temperature dependence of the dosimetric signal. Different well established MOS devices used for dosimetry are reviewed, pointing out its advantages and disadvantages. We finish with the description of some integrated circuits specially designed with the aim of outperform those MOS devices and incorporate more functionality to the dosimeter.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124032305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Successive Interference Cancellation for the NB-IoT Uplink Multiple Access","authors":"Gustavo J. González, F. Gregorio, J. Cousseau","doi":"10.1109/CAE48787.2020.9046368","DOIUrl":"https://doi.org/10.1109/CAE48787.2020.9046368","url":null,"abstract":"In the lowest complexity and consumption configuration, the narrow-band Internet of things (NB-IoT) standard is sensitive to hardware imperfections and interference from LTE users, due to the lost of orthogonality between the subcarriers. The interference from other LTE users is particularly harmful due to the low power decay of the leakage in the frequency domain and the fact that LTE received signals might have higher power than that of NB-IoT. In this paper, we provide measurement results that validate the interference leakage predicted by simulations. Additionally, we propose a successive interference cancellation (SIC) algorithm that is able to remove the interference and is robust to differences between the power of the received signals.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129277024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}