{"title":"集成350V调光器","authors":"Fabián Torres, J. Gak, A. Arnaud, M. Miguez","doi":"10.1109/CAE48787.2020.9046362","DOIUrl":null,"url":null,"abstract":"The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm2 without pads.","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Integrated 350V Dimmer\",\"authors\":\"Fabián Torres, J. Gak, A. Arnaud, M. Miguez\",\"doi\":\"10.1109/CAE48787.2020.9046362\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm2 without pads.\",\"PeriodicalId\":278190,\"journal\":{\"name\":\"2020 Argentine Conference on Electronics (CAE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Argentine Conference on Electronics (CAE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAE48787.2020.9046362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Argentine Conference on Electronics (CAE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAE48787.2020.9046362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm2 without pads.
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