用于电离辐射剂量测定的MOS器件和集成电路综述

M. Garcia-Inza, S. Carbonetto, A. Faigón
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引用次数: 2

摘要

本文综述了MOS剂量学的主要方面。MOS剂量计已使用了近50年,其性能自那时以来有所改善。为了了解MOS剂量计是如何工作的,其局限性以及克服这些局限性的不同策略,重要的是概述MOS结构中的辐射效应以及如何将其用于剂量估计。提出了不同的读取方法,以改善MOS剂量计的某些方面的性能,如其寿命或剂量测量信号的温度依赖性。综述了不同的已建立的用于剂量测定的MOS器件,指出了其优点和缺点。我们最后描述了一些专门设计的集成电路,其目的是超越那些MOS器件,并将更多的功能纳入剂量计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
MOS Devices and Integrated Circuits for Ionizing Radiation Dosimetry: a Review
In this paper we review the main aspects of MOS dosimetry. MOS dosimeters have been used for the last 50 years, and its performance has improved since then. To understand how a MOS dosimeter works its limitations and the different strategies to overcome them, it is important to overview the radiation effects in the MOS structure and how it can be used for dose estimation. Different reading methods are presented that improve some aspects of the performance of the MOS dosimeter, such as its lifespan or the temperature dependence of the dosimetric signal. Different well established MOS devices used for dosimetry are reviewed, pointing out its advantages and disadvantages. We finish with the description of some integrated circuits specially designed with the aim of outperform those MOS devices and incorporate more functionality to the dosimeter.
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