{"title":"ECG应用的ESD保护设计","authors":"Pablo J. Gardella, Eduardo Baez, J. Cesaretti","doi":"10.1109/CAE48787.2020.9046370","DOIUrl":null,"url":null,"abstract":"This paper presents the design of Electrostatic Discharge (ESD) protections for a remote Electroencephalograph (ECG). Design and layout guidelines are analyzed to improve the ESD robustness of a Grounded-Gate NMOS (GGNMOS) cell based on a single well CMOS-only process. Experimental validation is done by means of a Time Domain Reflectometry (TDR) technique known as Transmission Line Pulse (TLP) testing. The silicon implementation of the proposed design passes ±3700V in the Human-Body Model (HBM).","PeriodicalId":278190,"journal":{"name":"2020 Argentine Conference on Electronics (CAE)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design of ESD protections for ECG applications\",\"authors\":\"Pablo J. Gardella, Eduardo Baez, J. Cesaretti\",\"doi\":\"10.1109/CAE48787.2020.9046370\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of Electrostatic Discharge (ESD) protections for a remote Electroencephalograph (ECG). Design and layout guidelines are analyzed to improve the ESD robustness of a Grounded-Gate NMOS (GGNMOS) cell based on a single well CMOS-only process. Experimental validation is done by means of a Time Domain Reflectometry (TDR) technique known as Transmission Line Pulse (TLP) testing. The silicon implementation of the proposed design passes ±3700V in the Human-Body Model (HBM).\",\"PeriodicalId\":278190,\"journal\":{\"name\":\"2020 Argentine Conference on Electronics (CAE)\",\"volume\":\"156 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Argentine Conference on Electronics (CAE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAE48787.2020.9046370\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Argentine Conference on Electronics (CAE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAE48787.2020.9046370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents the design of Electrostatic Discharge (ESD) protections for a remote Electroencephalograph (ECG). Design and layout guidelines are analyzed to improve the ESD robustness of a Grounded-Gate NMOS (GGNMOS) cell based on a single well CMOS-only process. Experimental validation is done by means of a Time Domain Reflectometry (TDR) technique known as Transmission Line Pulse (TLP) testing. The silicon implementation of the proposed design passes ±3700V in the Human-Body Model (HBM).
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