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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)最新文献

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Dynamic three-dimensional mask-wafer positioning with nanometer exposure overlay accuracy 具有纳米曝光叠加精度的动态三维掩模-晶圆定位
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872741
E. Moon, P. Everett, M. Meinhold, H. Smith
{"title":"Dynamic three-dimensional mask-wafer positioning with nanometer exposure overlay accuracy","authors":"E. Moon, P. Everett, M. Meinhold, H. Smith","doi":"10.1109/IMNC.2000.872741","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872741","url":null,"abstract":"In previous articles we described an x-ray mask alignment scheme called Interferometric Broad-Band Imaging (IBBI), and an interferometric gapping scheme called Transverse Chirp Gapping (TCG). Both schemes encode position in the spatial phase relation of two sets of interference fringes, observed with an oblique-incidence optical microscope. IBBI is capable of detecting sub-nanometer misalignment, and TCG has shown a phase detectivity in the nanometer regime. Here we demonstrate the efficacy of IBBI and TCG for performing dynamically aligned and gapped exposures using a relatively inexpensive (-$150k), custom-built stepper. Additionally, we describe a scheme to minimize overlay runout by direct alignment of an x-ray point source to an arbitrary fiducial mark on the mask.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122556584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of temperature variation during post exposure bake on 193 nm chemically amplified resist simulation 曝光后烘烤温度变化对193 nm化学放大抗蚀剂模拟的影响
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872642
Y. Sohn, D. Sohn, Hye-keun Oh
{"title":"Effect of temperature variation during post exposure bake on 193 nm chemically amplified resist simulation","authors":"Y. Sohn, D. Sohn, Hye-keun Oh","doi":"10.1109/IMNC.2000.872642","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872642","url":null,"abstract":"We measured the temperature change of 193 nm chemically amplified resist during post exposure bake and investigated the effects of these variations on photoresist (PR) simulation. The effects of the variations were studied for various baking and cooling methods. The effective PEB time was determined by considering the temperature variation during PEB. The effective PEB times were used in simulation and the resulting PR profiles were compared with the experimental results. The resulting profiles showed a significant variation in line width depending on bake conditions. Careful PEB temperature consideration is necessary since the resulting line width is strongly dependent on the resist temperature rising and cooling rate. The effective bake time with proper consideration of the temperature change during PEB should be used in the simulation to depict experimental profile correctly.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122704958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
New passivation of GaAs Schottky contact using sulfidation and hydrogenation 硫化和加氢钝化GaAs肖特基触点的新方法
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872722
M. Kang, Jiwan Kim, Hyung‐Ho Park
{"title":"New passivation of GaAs Schottky contact using sulfidation and hydrogenation","authors":"M. Kang, Jiwan Kim, Hyung‐Ho Park","doi":"10.1109/IMNC.2000.872722","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872722","url":null,"abstract":"We report a novel method that can improve the Schottky property of Au/GaAs contact. The passivation technology was designed to control the defective states originated from two kinds of situations: i) air oxidation of GaAs surface before Schottky metallization, and ii) interfacial reaction during the metallization. In carefully controlled condition, the excellent Schottky contact was realized by sulfidation of GaAs surface and H-plasma treatment of Au/S-passivated GaAs interface.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117071528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hierarchical optical proximity correction on contact hole layers 接触孔层的分层光学接近校正
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872612
K. Yamamoto, S. Kobayashi, T. Uno, T. Kotani, S. Tanaka, S. Inoue, S. Watanabe, H. Higurashi
{"title":"Hierarchical optical proximity correction on contact hole layers","authors":"K. Yamamoto, S. Kobayashi, T. Uno, T. Kotani, S. Tanaka, S. Inoue, S. Watanabe, H. Higurashi","doi":"10.1109/IMNC.2000.872612","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872612","url":null,"abstract":"As the size of contact holes shrinks below 0.2 /spl mu/m, optical proximity correction (OPC) on contact hole layers becomes essential. When correcting contact holes, 1-dimensional correction is not applicable, and 2-dimensional correction is required, which needs much more intensive computation. To reduce computation, it is very effective to take advantage of the hierarchy of the input data. In order to further accelerate the OPC calculation, we adopted pattern matching into the OPC system, which can extract the hierarchy implicit in the layout data.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114875405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Elastically gimbaled in-plane vibrating microgyroscope 弹性平衡面内振动微陀螺仪
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872674
Hyung-Taek Lim, Yong-Kweon Kim, J. Song, Jang-Gyu Lee
{"title":"Elastically gimbaled in-plane vibrating microgyroscope","authors":"Hyung-Taek Lim, Yong-Kweon Kim, J. Song, Jang-Gyu Lee","doi":"10.1109/IMNC.2000.872674","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872674","url":null,"abstract":"This paper reports about the design and experimental results of the vibrating micromachined gyroscope that is designed to mechanically decoupled structure with optimized two gimbals. The gyroscope is characterized by a low linearity error of less than 0.5744% full scale for a measured range of /spl plusmn/150 deg/sec under vacuum pressure of 4 mTorr. The equivalent noise density is 0.002 deg/sec//spl radic/Hz and the equivalent noise rate is less than 0.005 deg/sec. The bias is stabilized between equivalent rate of less than 0.02 deg/sec.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114415638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact imprint system using driving power of stepping motor 紧凑的压印系统采用步进电机驱动
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872697
Y. Igaku, S. Matsui, H. Ishigaki, H. Hiroshima, M. Komuro, S. Yamanaka, T. Nagamura
{"title":"Compact imprint system using driving power of stepping motor","authors":"Y. Igaku, S. Matsui, H. Ishigaki, H. Hiroshima, M. Komuro, S. Yamanaka, T. Nagamura","doi":"10.1109/IMNC.2000.872697","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872697","url":null,"abstract":"In this paper, we report on a newly developed step-and-repeat nano-imprint-lithography (NIL) system using driving power of stepping motor which has advantages that the system size is small and the precise control is possible by using a stepping motor instead of a hydraulic press. We have developed a compact imprint lithography system and demonstrated replication of 1 /spl mu/m patterns as preliminary experiment. Nanometer patterns and details of several key operating parameters will be discussed.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130720359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Molecular level simulation of the free volume effect on acid transport 自由体积对酸运输影响的分子水平模拟
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872638
G. Schmid, S. Burns, M. Stewart, V.K. Singh, C. Willson
{"title":"Molecular level simulation of the free volume effect on acid transport","authors":"G. Schmid, S. Burns, M. Stewart, V.K. Singh, C. Willson","doi":"10.1109/IMNC.2000.872638","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872638","url":null,"abstract":"Chemically amplified photoresists are highly sensitive because the product of a single photolysis can catalyze many of the deprotection reactions that change the solubility of the resist film. In deep-ultraviolet (DUV) resists, mass transport of photogenerated acid during the post exposure bake allows a single acid molecule to catalyze several deprotection reactions. However, lateral transport of acid into unexposed regions of the resist can complicate control over the critical dimension of printed features. An understanding of the factors that contribute to acid mobility would allow resist manufacturers to tailor resist transport properties to their needs: however, the exact mechanism of acid transport still remains poorly understood. In this paper the efect of the lifetime of excess free volume upon resist performance has been studied with a molecular scale model.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125683860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current status of EUV optics and future advancements in optical components EUV光学的现状及光学元件的未来发展
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872763
D. Sweeney
{"title":"Current status of EUV optics and future advancements in optical components","authors":"D. Sweeney","doi":"10.1109/IMNC.2000.872763","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872763","url":null,"abstract":"An essential component for the success of extreme ultraviolet lithography is realization of an all-reflective optical imaging system with a total wavefront error approaching 0.25 nm rms and total flare of 5-10%. The current thinking in the EUVL community is to produce beta-class tools with a numerical aperture of about 0.25 and operate them at an EUV wavelength of about 13 nm. If a system with these parameters and wavefront quality can be achieved, then an EWL camera will print lithographic-quality features with 30 nm dense lines and spaces. While no such system has been assembled to date, all the prototype systems fabricated thus far indicate that the final goal will be reached within the next one- to two-years. While the final success of EUVL depends on many factors beyond the optical system, this paper will concentrate on EUVL imaging optical components and the technologies necessary to support their commercial manufacture and use.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128978470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Al dot hexagonal array formation using anodic oxidation and selective etching 采用阳极氧化和选择性蚀刻技术形成铝点六边形阵列
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872691
Y. Murakami, S. Shingubara, H. Sakaue, T. Talahagi
{"title":"Al dot hexagonal array formation using anodic oxidation and selective etching","authors":"Y. Murakami, S. Shingubara, H. Sakaue, T. Talahagi","doi":"10.1109/IMNC.2000.872691","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872691","url":null,"abstract":"Fabrication of nanoscale dot array are intensively required for realizing ultimately dense memory devices as well as quantum devices based on single-electron phenomena. However, there is an inherent problem for patterning time when pattern size shrinks below a few tens of nm, by lithographic methods based on beam technology. Patterning methods using self-organization phenomena provide alternative approach for realization of ordered array of nanostructure in relatively short time with a significant cost reduction. Al anodic oxidation has a high capability for realizing an extremely highly ordered array of nano-hole, so that there have been several attempts to realize nanowire arrays. The present study investigates formation of nano-dot array on semiconductor substrate using Al anodic oxidation.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129330582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel micromachined CPW transmission lines for application in millimeter-wave circuits 应用于毫米波电路的新型微加工CPW传输线
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI: 10.1109/IMNC.2000.872635
Jae-Hyoung Park, Chang-Wook Baek, Sanghwa-Jung, Hong-Teuk Kim, Youngwoo Kwon, Yong-Kweon Kim
{"title":"Novel micromachined CPW transmission lines for application in millimeter-wave circuits","authors":"Jae-Hyoung Park, Chang-Wook Baek, Sanghwa-Jung, Hong-Teuk Kim, Youngwoo Kwon, Yong-Kweon Kim","doi":"10.1109/IMNC.2000.872635","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872635","url":null,"abstract":"The purpose of this paper is to represent the CPW transmission line with low loss and low dispersion, which can be easily fabricated with conventional MMIC technology. In the paper, two types of novel transmission lines with the length of 1 cm are fabricated and the measured characteristics are compared with those of the conventional CPW transmission line.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130112365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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