硫化和加氢钝化GaAs肖特基触点的新方法

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872722

M. Kang, Jiwan Kim, Hyung‐Ho Park

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引用次数: 1

摘要

本文报道了一种改善Au/GaAs接触肖特基性质的新方法。钝化技术的目的是控制肖特基金属化前GaAs表面的空气氧化和金属化过程中的界面反应所产生的缺陷态。在精心控制的条件下，通过对GaAs表面的硫化和对Au/ s钝化GaAs界面的h等离子体处理，实现了优异的肖特基接触。

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New passivation of GaAs Schottky contact using sulfidation and hydrogenation

We report a novel method that can improve the Schottky property of Au/GaAs contact. The passivation technology was designed to control the defective states originated from two kinds of situations: i) air oxidation of GaAs surface before Schottky metallization, and ii) interfacial reaction during the metallization. In carefully controlled condition, the excellent Schottky contact was realized by sulfidation of GaAs surface and H-plasma treatment of Au/S-passivated GaAs interface.

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来源期刊

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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