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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Heavy Ions Testing of an All-Convolutional Neural Network for Image Classification Evolved by Genetic Algorithms and Implemented on SRAM-Based FPGA 基于遗传算法进化的全卷积神经网络图像分类重离子测试及基于sram的FPGA实现
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745650
F. Benevenuti, Á. B. de Oliveira, Israel C. Lopes, F. Kastensmidt, N. Added, V. Aguiar, Nilberto H. Medina, M. Guazzelli
{"title":"Heavy Ions Testing of an All-Convolutional Neural Network for Image Classification Evolved by Genetic Algorithms and Implemented on SRAM-Based FPGA","authors":"F. Benevenuti, Á. B. de Oliveira, Israel C. Lopes, F. Kastensmidt, N. Added, V. Aguiar, Nilberto H. Medina, M. Guazzelli","doi":"10.1109/radecs47380.2019.9745650","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745650","url":null,"abstract":"This work investigates the vulnerability of an image classification engine under heavy-ions accelerated irradiation. The engine is based on all-convolutional neural-network trained with the GTSRB traffic sign recognition benchmark and embedded into 28nm SRAM-based FPGA.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131230089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast Neutron Production at Particle Accelerators for Radiation Hardness Assurance Tests 辐射硬度保证试验用粒子加速器产生快中子
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745664
S. Braccini, L. Campajola, P. Casolaro, P. Scampoli
{"title":"Fast Neutron Production at Particle Accelerators for Radiation Hardness Assurance Tests","authors":"S. Braccini, L. Campajola, P. Casolaro, P. Scampoli","doi":"10.1109/radecs47380.2019.9745664","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745664","url":null,"abstract":"The fast neutron production was carried out with MeV protons on a lithium target. The modulation of the target thickness and proton current and energy allows for the production of neutron beams for DDD and SEE tests.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130836752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Radiation Effects (Single Event Effects and Total Ionization Dose) on Commercial LP-DDR3 SDRAM for ESA JUICE Mission 欧航局JUICE任务商用LP-DDR3 SDRAM的辐射效应(单事件效应和总电离剂量
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745703
B. Tanios, F. Lochon, O. Perrotin, P. Fontana, B. Forgerit, F. Tilhac, F. Guerre, C. Poivey
{"title":"Radiation Effects (Single Event Effects and Total Ionization Dose) on Commercial LP-DDR3 SDRAM for ESA JUICE Mission","authors":"B. Tanios, F. Lochon, O. Perrotin, P. Fontana, B. Forgerit, F. Tilhac, F. Guerre, C. Poivey","doi":"10.1109/radecs47380.2019.9745703","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745703","url":null,"abstract":"This work presents a comparative study of Total Ionization Dose (TID) and Single Event Effects (SEE) radiation sensitivity of three commercial LP-DDR3 SDRAM memories for the JUpiter ICy moons Explorer (JUICE) Mission of the European Space Agency (ESA). Techniques for SEFI mitigation in LP-DDR3 SDRAM are studied.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116048798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity DARE180U MOSFET通道几何TID辐射灵敏度的表征
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745671
R. Jansen, B. Glass, C. Boatella-Polo, G. Thys, S. Verhaegen, G. Franciscatto, J. Wouters, D. Lambrichts, S. Vargas-Sierra, J. J. Lujan
{"title":"Characterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity","authors":"R. Jansen, B. Glass, C. Boatella-Polo, G. Thys, S. Verhaegen, G. Franciscatto, J. Wouters, D. Lambrichts, S. Vargas-Sierra, J. J. Lujan","doi":"10.1109/radecs47380.2019.9745671","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745671","url":null,"abstract":"The design of radiation tolerant mixed-signal circuits is confronted with either RHBD transistors that are not supported by the foundry monitoring and modelling or the inaccurate estimate of the radiation effects of the foundry supported devices. A test-vehicle has been created that includes for all the DARE180U technology devices types and channel geometries test structures to capture the electrical characterisation of the TID radiation response. The results of the measurements are presented and do allow a more accurate estimate of the TID radiation response for the mixed-signal circuits in the DARE180U technology. Furthermore, the wealth of data obtained would enable accurate modelling of the radiation TID effects in these devices.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132923383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compendium of Radiation-Induced Effects on µProcessors 微处理器辐射诱导效应简编
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745694
G. Tsiligiannis, S. Danzeca, A. Masi
{"title":"Compendium of Radiation-Induced Effects on µProcessors","authors":"G. Tsiligiannis, S. Danzeca, A. Masi","doi":"10.1109/radecs47380.2019.9745694","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745694","url":null,"abstract":"In this paper, we analyze the sensitivity of four ARM-based microprocessors under Proton induced radiation. The purpose of the study is to explore the reliability limitations of these devices under the CERN radiation environment.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130523758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability analysis of a 65nm Rad-Hard SRAM-Based FPGA for CERN applications CERN应用65nm Rad-Hard sram FPGA可靠性分析
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745713
G. Tsiligiannis, C. Debarge, J. Le Mauff, A. Masi, S. Danzeca
{"title":"Reliability analysis of a 65nm Rad-Hard SRAM-Based FPGA for CERN applications","authors":"G. Tsiligiannis, C. Debarge, J. Le Mauff, A. Masi, S. Danzeca","doi":"10.1109/radecs47380.2019.9745713","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745713","url":null,"abstract":"In search of alternative solutions for Field Programmable Gate Arrays (FPGA) that can withstand the higher dose levels foreseen in the upcoming upgrades of the Large Hadron Collider (LHC), a new Radiation Hardened FPGA is targeted. More specifically, in this work, the effects of proton induced radiation on a 65nm Rad Hard SRAM-Based FPGA are investigated, while applying tailored tests for each resource of the FPGA. The results of the study are then used to perform a Reliability analysis of this device, adapted to the CERN radiation environment while using standard models.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130524906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors 低温辐照对NPN双极结晶体管的影响
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745644
J. Dardié, J. Boch, A. Michez, C. Guasch, S. Bouisri, F. Saigné, F. Bezerra, J. Favre
{"title":"Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors","authors":"J. Dardié, J. Boch, A. Michez, C. Guasch, S. Bouisri, F. Saigné, F. Bezerra, J. Favre","doi":"10.1109/radecs47380.2019.9745644","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745644","url":null,"abstract":"The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122300179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Approach of Single Event Latchup Modeling Based on TCAD Simulations and Design of Experiment Analysis 基于TCAD仿真的单事件闭锁建模新方法及实验分析设计
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745658
D. Truyen, L. Montagner
{"title":"New Approach of Single Event Latchup Modeling Based on TCAD Simulations and Design of Experiment Analysis","authors":"D. Truyen, L. Montagner","doi":"10.1109/radecs47380.2019.9745658","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745658","url":null,"abstract":"This work presents a predictive SEL modeling based on physical simulations and DOE analysis. The model is built from layout and process inputs and evaluates the SEL risk by estimating the LET threshold.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128850728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mixed-Field Radiation Qualification of a COTS Space On-Board Computer along with its CMOS Camera Payload COTS空间机载计算机及其CMOS相机载荷的混合场辐射鉴定
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745699
A. Coronetti, F. Manni, J. Mekki, D. Dangla, C. Virmontois, N. Kerboub, R. G. Alía
{"title":"Mixed-Field Radiation Qualification of a COTS Space On-Board Computer along with its CMOS Camera Payload","authors":"A. Coronetti, F. Manni, J. Mekki, D. Dangla, C. Virmontois, N. Kerboub, R. G. Alía","doi":"10.1109/radecs47380.2019.9745699","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745699","url":null,"abstract":"The radiation qualification of a complex space system made out of multiple commercial electronic components and modules is a non-standardized task with certain limitations, but also wide potentialities. This paper delves into the features of a system-level test methodologies and explains how to use the data retrieved with a mixed-field characterization. Lesson learned concepts can be applied to the the system level irradiation test preparation as well as the actual application.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128011878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors 总电离剂量对先进Si/SiGe:C异质结双极晶体管1-V和低频噪声特性的影响
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745680
J. El Beyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A. Hoffman, M. Valenza, J. Boch, T. Maraine, S. Haendler, A. Gauthier, P. Chevalier, D. Gloria
{"title":"Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors","authors":"J. El Beyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A. Hoffman, M. Valenza, J. Boch, T. Maraine, S. Haendler, A. Gauthier, P. Chevalier, D. Gloria","doi":"10.1109/radecs47380.2019.9745680","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745680","url":null,"abstract":"This study presents an investigation of the dose response of Si/SiGe HBTs developed with the last generation of BiCMOS technologies. DC electrical characterization and low-frequency noise measurements are carried out to evaluate the post-radiation degradations.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121214967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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