DARE180U MOSFET通道几何TID辐射灵敏度的表征

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745671

R. Jansen, B. Glass, C. Boatella-Polo, G. Thys, S. Verhaegen, G. Franciscatto, J. Wouters, D. Lambrichts, S. Vargas-Sierra, J. J. Lujan

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引用次数: 0

摘要

耐辐射混合信号电路的设计面临着RHBD晶体管不受铸造厂监测和建模支持或对铸造厂支持器件的辐射效应估计不准确的问题。已经创建了一个测试车辆，包括所有DARE180U技术设备类型和通道几何形状测试结构，以捕获TID辐射响应的电气特性。给出了测量结果，并允许对DARE180U技术中混合信号电路的TID辐射响应进行更准确的估计。此外，所获得的丰富数据将使这些装置中的辐射TID效应能够精确建模。

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Characterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity

The design of radiation tolerant mixed-signal circuits is confronted with either RHBD transistors that are not supported by the foundry monitoring and modelling or the inaccurate estimate of the radiation effects of the foundry supported devices. A test-vehicle has been created that includes for all the DARE180U technology devices types and channel geometries test structures to capture the electrical characterisation of the TID radiation response. The results of the measurements are presented and do allow a more accurate estimate of the TID radiation response for the mixed-signal circuits in the DARE180U technology. Furthermore, the wealth of data obtained would enable accurate modelling of the radiation TID effects in these devices.

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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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