Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745680

J. El Beyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A. Hoffman, M. Valenza, J. Boch, T. Maraine, S. Haendler, A. Gauthier, P. Chevalier, D. Gloria

引用次数: 1

Abstract

This study presents an investigation of the dose response of Si/SiGe HBTs developed with the last generation of BiCMOS technologies. DC electrical characterization and low-frequency noise measurements are carried out to evaluate the post-radiation degradations.

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总电离剂量对先进Si/SiGe:C异质结双极晶体管1-V和低频噪声特性的影响

本研究对上一代BiCMOS技术开发的Si/SiGe HBTs的剂量响应进行了研究。直流电气特性和低频噪声测量进行评估辐射后的退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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