低温辐照对NPN双极结晶体管的影响

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745644

J. Dardié, J. Boch, A. Michez, C. Guasch, S. Bouisri, F. Saigné, F. Bezerra, J. Favre

{"title":"低温辐照对NPN双极结晶体管的影响","authors":"J. Dardié, J. Boch, A. Michez, C. Guasch, S. Bouisri, F. Saigné, F. Bezerra, J. Favre","doi":"10.1109/radecs47380.2019.9745644","DOIUrl":null,"url":null,"abstract":"The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors\",\"authors\":\"J. Dardié, J. Boch, A. Michez, C. Guasch, S. Bouisri, F. Saigné, F. Bezerra, J. Favre\",\"doi\":\"10.1109/radecs47380.2019.9745644\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.\",\"PeriodicalId\":269018,\"journal\":{\"name\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs47380.2019.9745644\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了低温辐照下剂量对NPN双极晶体管的影响。显示了前向古梅尔曲线和电流增益的退化。低温辐照后有两种可能的情况。对于250K及以上的辐照温度，低温辐照不产生影响。在225K及以下的辐照温度下，可以获得低Vbe的减小电流增益。

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Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors

The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.

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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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