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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745700
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引用次数: 0
Radiation Testing of the IDE3380 SiPM Readout ASIC IDE3380 SiPM读出ASIC的辐射测试
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745675
T. Stein, Arne Fredriksen, J. Holter, Petter Øya, Ketil Rϕed, D. Meier
{"title":"Radiation Testing of the IDE3380 SiPM Readout ASIC","authors":"T. Stein, Arne Fredriksen, J. Holter, Petter Øya, Ketil Rϕed, D. Meier","doi":"10.1109/radecs47380.2019.9745675","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745675","url":null,"abstract":"The IDEAS IDE3380 mixed-signal SiPM readout ASIC and ADC technology for space in AMS 0.35μm CMOS shows no relevant change below 340 krad(Si) TID, no latch-up below 137 MeV cm2/mg, and no SEU/SETs below 18 MeV cm2/mg.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130638522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Low-Overhead Radiation Hardening Approach using Approximate Computing and Selective Fault Tolerance Techniques at the Software Level 采用近似计算和软件级选择性容错技术的低开销辐射强化方法
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745663
Alexander Aponte-Moreno, Felipe Restrepo-Calle, C. Pedraza
{"title":"A Low-Overhead Radiation Hardening Approach using Approximate Computing and Selective Fault Tolerance Techniques at the Software Level","authors":"Alexander Aponte-Moreno, Felipe Restrepo-Calle, C. Pedraza","doi":"10.1109/radecs47380.2019.9745663","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745663","url":null,"abstract":"This paper presents a method to reduce execution time overheads in the design of radiation-induced fault-tolerant systems by means of Approximate Computing and selective FT software techniques. A case study for MSP430 microcontroller is presented.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117353234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LVDS Transmitter for Cold-Spare Systems in High Flux Environments 用于高通量环境下冷备用系统的LVDS变送器
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745657
T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi
{"title":"LVDS Transmitter for Cold-Spare Systems in High Flux Environments","authors":"T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi","doi":"10.1109/radecs47380.2019.9745657","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745657","url":null,"abstract":"A high-bandwidth LVDS Transmitter (TX) has been proposed for redundant parallel connection of semiconductor devices in cold-spare systems. The cold-spare configuration is widely adopted for secure system operation of artificial satellite exposed to highly-radiated environment. For applying to the configuration in radiation hardened application, the LVDS-TX has i) off-chip driver consisting of only NMOS transistors to enhance latch-up immunity, ii) replica biasing for common mode voltage stabilization independently to off-chip loading, iii) multiple guard ring between large NMOS and N-Well areas. The proposed LVDS-TX has been fabricated by using bulk I/O and SOI core transistors in a 65 nm FDSOI process. Measurement results show over-500Mbit/sec stable data communication, and remarkable suppression of BER (Bit Error Rate) degradation compared to commercial device under ${}^{84}text{Kr}^{17+}$ exposure of 322.0 MeV at flux of over 5x105 count/cm2/s.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124058114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Circuit-Level Hardening Techniques to Mitigate Soft Errors in FinFET Logic Gates 减轻FinFET逻辑门软错误的电路级强化技术
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745706
A. Zimpeck, Laurent Artola, G. Hubert, C. Meinhardt, F. Kastensmidt, Ricardo Reis
{"title":"Circuit-Level Hardening Techniques to Mitigate Soft Errors in FinFET Logic Gates","authors":"A. Zimpeck, Laurent Artola, G. Hubert, C. Meinhardt, F. Kastensmidt, Ricardo Reis","doi":"10.1109/radecs47380.2019.9745706","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745706","url":null,"abstract":"Transistor reordering and insertion of decoupling cells are explored to reduce the soft errors susceptibility of circuits designed with FinFETs. This work shows that robustness improves up to 37% and 10% with the respective methodologies.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115027613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing 基于TCAD模拟的单事件闭锁截面计算-掺杂剖面和阳极阴极间距的影响
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745682
S. Guagliardo, F. Wrobel, Y. Aguiar, J. Autran, P. Leroux, F. Saigné, V. Pouget, A. Touboul
{"title":"Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing","authors":"S. Guagliardo, F. Wrobel, Y. Aguiar, J. Autran, P. Leroux, F. Saigné, V. Pouget, A. Touboul","doi":"10.1109/radecs47380.2019.9745682","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745682","url":null,"abstract":"In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123236356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs 采用SEGR引入的碳化硅功率mosfet中损坏部位的行为
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745719
Y. Nakada, S. Kuboyama, E. Mizuta, A. Takeyama, T. Ohshima, H. Shindou
{"title":"Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs","authors":"Y. Nakada, S. Kuboyama, E. Mizuta, A. Takeyama, T. Ohshima, H. Shindou","doi":"10.1109/radecs47380.2019.9745719","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745719","url":null,"abstract":"The behavior of damage sites induced by SEGR in SiC vertical power MOSFETs was found to be essentially different from that observed in corresponding Si devices, although the electrical behavior was similarly modeled.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116715366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Upgrade of Low Flux Proton Irradiation Facility for Radiation Effect Test at KOMAC KOMAC低通量质子辐照装置的辐射效应试验升级
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745674
Yu-Mi Kim, S. Yun, Young-Gi Song, Han-sung Kim, H. Kwon, Kyeryung Kim, Yong-sub Cho
{"title":"Upgrade of Low Flux Proton Irradiation Facility for Radiation Effect Test at KOMAC","authors":"Yu-Mi Kim, S. Yun, Young-Gi Song, Han-sung Kim, H. Kwon, Kyeryung Kim, Yong-sub Cho","doi":"10.1109/radecs47380.2019.9745674","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745674","url":null,"abstract":"Korea Multi-purpose Accelerator Complex (KOMAC) has been operating 20 MeV and 100 MeV proton beam lines to provide proton beams for various applications since 2013. A new beam line with low-flux proton densities was constructed and started beam service to user for simulation of the space radiation-like environment since 2018. The new beam line can provide a very low flux of 105 #/cm2/pulse, good uniformity within ± 10% and a large beam area with a wide range of proton energies. Recently, the irradiation room of the low-flux beam line has been upgraded with new beam diagnostics instruments and new control interface for improving the efficiency of the beam tuning process and for improving beam quality assurance. In this study, the details on the upgrade in the low flux proton irradiation room at KOMAC will be given.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124167801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An open source embedded-GPGPU model for the accurate analysis and mitigation of SEU effects 一个开源的嵌入式gpgpu模型，用于精确分析和减轻SEU效应
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745670
B. Du, J. E. R. Condia, M. Reorda, L. Sterpone
{"title":"An open source embedded-GPGPU model for the accurate analysis and mitigation of SEU effects","authors":"B. Du, J. E. R. Condia, M. Reorda, L. Sterpone","doi":"10.1109/radecs47380.2019.9745670","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745670","url":null,"abstract":"Abstrac1- In this paper, we propose a new hardware and synthesizable model of an embedded General Purpose Graphic Processing Unit (GPGPUs) designed for analyzing and mitigating radiation effects. Comparative SEU injection experiments confirms the model effectiveness.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133958105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
X-ray irradiation response of antireflection coatings 增透涂层的x射线辐照响应
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745639
C. Muller, T. Allanche, A. Morana, P. Paillet, T. Lépine, A. Boukenter, Y. Ouerdane, S. Girard
{"title":"X-ray irradiation response of antireflection coatings","authors":"C. Muller, T. Allanche, A. Morana, P. Paillet, T. Lépine, A. Boukenter, Y. Ouerdane, S. Girard","doi":"10.1109/radecs47380.2019.9745639","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745639","url":null,"abstract":"In the domain of imaging in harsh environments, adding antireflection coatings on lenses increases the flux on the sensor and minimizes the ghost images. However, the radiation can influence the performances of these coatings. In this paper, we studied such effects on commercially available antireflection coatings, up to the total ionizing dose of 1 MGy(SiO2). Online radiation-induced attenuation measurements highlight slight differences between uncoated and coated samples that are not clearly observable in post-mortem transmission and reflection spectra. We also report photoluminescence spectra.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132644665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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