采用SEGR引入的碳化硅功率mosfet中损坏部位的行为

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745719

Y. Nakada, S. Kuboyama, E. Mizuta, A. Takeyama, T. Ohshima, H. Shindou

{"title":"采用SEGR引入的碳化硅功率mosfet中损坏部位的行为","authors":"Y. Nakada, S. Kuboyama, E. Mizuta, A. Takeyama, T. Ohshima, H. Shindou","doi":"10.1109/radecs47380.2019.9745719","DOIUrl":null,"url":null,"abstract":"The behavior of damage sites induced by SEGR in SiC vertical power MOSFETs was found to be essentially different from that observed in corresponding Si devices, although the electrical behavior was similarly modeled.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs\",\"authors\":\"Y. Nakada, S. Kuboyama, E. Mizuta, A. Takeyama, T. Ohshima, H. Shindou\",\"doi\":\"10.1109/radecs47380.2019.9745719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The behavior of damage sites induced by SEGR in SiC vertical power MOSFETs was found to be essentially different from that observed in corresponding Si devices, although the electrical behavior was similarly modeled.\",\"PeriodicalId\":269018,\"journal\":{\"name\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs47380.2019.9745719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在SiC垂直功率mosfet中，SEGR诱导的损伤位点的行为与在相应的Si器件中观察到的行为本质上不同，尽管电学行为类似。

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Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs

The behavior of damage sites induced by SEGR in SiC vertical power MOSFETs was found to be essentially different from that observed in corresponding Si devices, although the electrical behavior was similarly modeled.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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