Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing

Abstract

In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.