Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors

Abstract

The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.