2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)最新文献_第3页

Thermal management and thermal resistance of high power LEDs 大功率led的热管理和热阻

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451776

T. Zahner

引用次数: 24

Lumped and distributed parameter SPICE models of TE devices considering temperature dependent material properties 考虑温度相关材料特性的TE器件集总参数和分布参数SPICE模型

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451778

D. Mitrani, J. Salazar, A. Turó, M.J. Garcia, J. Chávez

{"title":"Lumped and distributed parameter SPICE models of TE devices considering temperature dependent material properties","authors":"D. Mitrani, J. Salazar, A. Turó, M.J. Garcia, J. Chávez","doi":"10.1109/THERMINIC.2007.4451778","DOIUrl":"https://doi.org/10.1109/THERMINIC.2007.4451778","url":null,"abstract":"Based on simplified one-dimensional steady-state analysis of thermoelectric phenomena and on analogies between thermal and electrical domains, we propose both lumped and distributed parameter electrical models for thermoelectric devices. For lumped parameter models, constant values for material properties are extracted from polynomial fit curves evaluated at different module temperatures (hot side, cold side, average, and mean module temperature). For the case of distributed parameter models, material properties are calculated according to the mean temperature at each segment of a sectioned device. A couple of important advantages of the presented models are that temperature dependence of material properties is considered and that they can be easily simulated using an electronic simulation tool such as SPICE. Comparisons are made between SPICE simulations for a single-pellet module using the proposed models and with numerical simulations carried out with Mathematica software. Results illustrate accuracy of the distributed parameter models and show how inappropriate is to assume, in some cases, constant material parameters for an entire thermoelectric element.","PeriodicalId":264943,"journal":{"name":"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124641584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Development of EHD ion-drag micropump for microscale electronics cooling 用于微电子冷却的EHD离子拖动微泵的研制

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451745

C. Lee, A. Robinson, C. Ching

引用次数: 16

Utility of transient testing to characterize thermal interface materials 利用瞬态测试表征热界面材料

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451738

B. Smith, T. Brunschwiler, B. Michel

引用次数: 21

Flexible profile approach to the steady conjugate heat transfer problem 稳定共轭传热问题的柔性轮廓法

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451765

M. Sabry

引用次数: 1

Very fast chip-level thermal analysis 非常快的芯片级热分析

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451752

K. Nakabayashi, T. Nakabayashi, K. Nakajima

引用次数: 2

A novel thermal position sensor integrated on a plastic substrate 一种集成在塑料基板上的新型热位置传感器

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451759

A. Petropoulos, G. Kaltsas, D. Goustouridis, A. Nassiopoulou

引用次数: 3

Numerically investigating the effects of cross links in scaled microchannel heat sinks 尺度微通道散热器中交联效应的数值研究

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1115/1.3001093

M. Dang, I. Hassan, S.I. Kim

{"title":"Numerically investigating the effects of cross links in scaled microchannel heat sinks","authors":"M. Dang, I. Hassan, S.I. Kim","doi":"10.1115/1.3001093","DOIUrl":"https://doi.org/10.1115/1.3001093","url":null,"abstract":"Thermal management for high performance of miniaturized electronic devices using microchannel heat sinks has recently become of interest to researchers and industry. Obtaining heat sink designs with uniform flow distribution is strongly desired. A number of experimental studies have been conducted to seek appropriate designs for microchannel heat sinks. However, pursuing this goal experimentally can be an expensive endeavor. The present work investigates the effect of cross-links on adiabatic two-phase flow in an array of parallel channels. It is carried out using the three-dimensional mixture model from the computational fluid dynamics (CFD) software, Fluent 6.3. A straight channel and two cross-linked channel models were simulated. The cross-links were located at 1/3 and 2/3's of the channel length, their width varied by one and two times the channel width. All test models had 45 parallel rectangular channels, with a hydraulic diameter of 1.59 mm. The results showed that the trend of flow distribution agrees with experimental results. A new design, with cross-links incorporated, was proposed and the results showed a significant improvement, up to 55%, on flow distribution, compared to the standard straight channel configuration without a penalty in the pressure drop. The effect of cross-links on flow distribution, flow structure, and pressure drop was also documented.","PeriodicalId":264943,"journal":{"name":"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122673378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Transient non-linear thermal FEM simulation of smart power switches and verification by measurements 智能电源开关瞬态非线性热有限元仿真及实测验证

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451757

V. Kosel, R. Sleik, M. Glavanovics

{"title":"Transient non-linear thermal FEM simulation of smart power switches and verification by measurements","authors":"V. Kosel, R. Sleik, M. Glavanovics","doi":"10.1109/THERMINIC.2007.4451757","DOIUrl":"https://doi.org/10.1109/THERMINIC.2007.4451757","url":null,"abstract":"Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly temperature dependent. In this paper, validity of a common non-linear silicon material model is verified by transient non-linear thermal FEM simulations of Smart Power Switches and measurements. For verification, over-temperature protection behavior of Smart Power Switches is employed. This protection turns off the switch at a predefined temperature which is used as a temperature reference in the investigation. Power dissipation generated during a thermal overload event of two Smart Power devices is measured and used as an input stimulus to transient thermal FEM simulations. The duration time of the event together with the temperature reference is confronted with simulation results and thus the validity of the silicon model is proved. In addition, the impact of non-linear thermal properties of silicon on the thermal impedance of power semiconductors is shown.","PeriodicalId":264943,"journal":{"name":"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133233045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Short time die attach characterization of semiconductor devices 半导体器件的短时间贴装特性

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI: 10.1109/THERMINIC.2007.4451739

P. Szabó, M. Rencz

引用次数: 10