Transient non-linear thermal FEM simulation of smart power switches and verification by measurements

2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Pub Date : 2007-09-01 DOI:10.1109/THERMINIC.2007.4451757

V. Kosel, R. Sleik, M. Glavanovics

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引用次数: 21

Abstract

Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly temperature dependent. In this paper, validity of a common non-linear silicon material model is verified by transient non-linear thermal FEM simulations of Smart Power Switches and measurements. For verification, over-temperature protection behavior of Smart Power Switches is employed. This protection turns off the switch at a predefined temperature which is used as a temperature reference in the investigation. Power dissipation generated during a thermal overload event of two Smart Power devices is measured and used as an input stimulus to transient thermal FEM simulations. The duration time of the event together with the temperature reference is confronted with simulation results and thus the validity of the silicon model is proved. In addition, the impact of non-linear thermal properties of silicon on the thermal impedance of power semiconductors is shown.

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智能电源开关瞬态非线性热有限元仿真及实测验证

热有限元模拟可以用于预测应用中功率半导体的热行为。大多数功率半导体是由硅制成的。硅热材料的性能与温度密切相关。本文通过对智能电源开关的瞬态非线性热有限元模拟和测量，验证了常用非线性硅材料模型的有效性。为了验证，采用了智能电源开关的过温保护行为。这种保护在预定义的温度下关闭开关，该温度用作调查中的温度参考。测量了两个智能电源器件在热过载时产生的功耗，并将其作为瞬态热有限元模拟的输入激励。仿真结果与事件持续时间和参考温度进行了比较，从而证明了硅模型的有效性。此外，还分析了硅的非线性热特性对功率半导体热阻抗的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)

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