{"title":"半导体器件的短时间贴装特性","authors":"P. Szabó, M. Rencz","doi":"10.1109/THERMINIC.2007.4451739","DOIUrl":null,"url":null,"abstract":"Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this layer may cause higher temperature elevation and thus damage or shorter lifetime. Thermal test of each device in the manufacturing process would be the best solution for eliminating the devices with wrong die attach layer. In this paper we will present the short time thermal transient measurement method and the structure function evaluation through simulations and measurements for die attach characterization. We will also present a method for eliminating the very time consuming calibration process. Using the proposed methods even the in-line testing of LEDs can be accomplished.","PeriodicalId":264943,"journal":{"name":"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Short time die attach characterization of semiconductor devices\",\"authors\":\"P. Szabó, M. Rencz\",\"doi\":\"10.1109/THERMINIC.2007.4451739\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this layer may cause higher temperature elevation and thus damage or shorter lifetime. Thermal test of each device in the manufacturing process would be the best solution for eliminating the devices with wrong die attach layer. In this paper we will present the short time thermal transient measurement method and the structure function evaluation through simulations and measurements for die attach characterization. We will also present a method for eliminating the very time consuming calibration process. Using the proposed methods even the in-line testing of LEDs can be accomplished.\",\"PeriodicalId\":264943,\"journal\":{\"name\":\"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/THERMINIC.2007.4451739\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THERMINIC.2007.4451739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Short time die attach characterization of semiconductor devices
Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this layer may cause higher temperature elevation and thus damage or shorter lifetime. Thermal test of each device in the manufacturing process would be the best solution for eliminating the devices with wrong die attach layer. In this paper we will present the short time thermal transient measurement method and the structure function evaluation through simulations and measurements for die attach characterization. We will also present a method for eliminating the very time consuming calibration process. Using the proposed methods even the in-line testing of LEDs can be accomplished.